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Nexperia N-Channel MOSFET 850 mA, 30 V Enhancement 3-Pin SOT-23 BSH103,215

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Nexperia N-Channel MOSFET 850 mA, 30 V Enhancement 3-Pin SOT-23 BSH103,215

Name: Nexperia N-Channel MOSFET 850 mA, 30 V Enhancement 3-Pin SOT-23 BSH103,215
Brand: Nexperia
SKU: 189648
Price: 0.2 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	BSH103,215
Width	1.4mm
Mount Type	Surface
Series	BSH103
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	850mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	400mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	2.1nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.3V
onsemi N-Channel MOSFET, 2.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4503NT1GBrand	onsemi

Key Features

The device features an enhancement mode channel for efficient operation.
It is housed in a compact 3-pin SOT-23 surface mount package.
Low maximum drain-source resistance of 400 milliohms reduces power loss.
Typical gate charge of 2.1 nC ensures fast switching speed.
Operating temperature ranges from -55°C to 150°C for robust industrial applications.
Maximum power dissipation of 500 mW suits low power electronics.
Forward voltage is 1.3 V under standard conditions.
Dimensionally compact with 3 mm length, 1.4 mm width, and 1 mm height.

Product Description

Nexperia BSH103,215 is a N-Channel MOSFET designed for efficient switching applications, supporting a maximum continuous drain current of 850 mA and a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount device, it is ideal for use in modern electronic circuits requiring reliable semiconductor components.

This MOSFET operates in enhancement mode with a low maximum drain-source resistance of 400 milliohms, ensuring minimized power losses during conduction. The device features a typical gate charge of 2.1 nC at Vgs, allowing for rapid switching and high-frequency operation.

Designed to perform reliably in a wide temperature range from -55°C to 150°C, the BSH103,215 is suitable for demanding industrial, automotive, and consumer electronics environments. With maximum power dissipation of 500 mW and a forward voltage drop of 1.3 V, it balances efficient power handling and thermal performance.

The compact dimensions - 3 mm length, 1.4 mm width, and 1 mm height - facilitate high-density PCB layouts. This product is manufactured in China and maintains a new product condition.

The device features an enhancement mode channel for efficient operation. Low maximum drain-source resistance of 400 milliohms reduces power loss. Typical gate charge of 2.1 nC ensures fast switching speed. Wide operating temperature range from -55°C to 150°C.

Compact 3-pin SOT-23 surface mount package supports space-sensitive designs. Maximum power dissipation rated at 500 mW for reliable performance. Forward voltage of 1.3 V under standard operating conditions. Product is new and made in China.

This Nexperia MOSFET is broadly applied in industrial electronics, power management, automotive systems, and other high-reliability electronic applications. It supports efficient switching with minimal losses in power circuits and embedded systems.

Explore the Electronics & Electricals category on EnvMart to find enhanced MOSFETs like the BSH103,215 for your industrial and commercial electronic component needs.