onsemi UniFET N-Channel MOSFET 680 mA 25 V Enhancement 3-Pin SOT-23 FDV303N

The onsemi FDV303N is a UniFET enhancement mode N-Channel MOSFET designed for efficient switching in compact surface mount applications. Featuring a maximum continuous drain current of 680 mA and a drain-source voltage rating of 25 V, this transistor is well-suited for low power electronic circuits and power management tasks.

Encapsulated in a small 3-pin SOT-23 package with dimensions of 2.92 mm length, 1.3 mm width, and 930 μm height, it supports surface mounting on printed circuit boards (PCBs) with minimal footprint.

The device boasts a low maximum drain-source resistance of 450 mΩ to reduce conduction losses and improve efficiency. Its maximum power dissipation rating of 350 mW allows it to operate reliably under typical usage conditions.

Designed with a wide temperature tolerance ranging from -55°C to 150°C, the FDV303N can sustain harsh industrial and environmental conditions without degradation, enhancing system stability.

The typical gate charge of 1.64 nC ensures rapid switching speeds essential for efficient power conversion and signal control. The device supports a maximum gate-source voltage of ±8 V, providing robust drive capabilities and protection.

Enhancement mode N-Channel MOSFET with 680 mA max drain current. Maximum drain-source voltage rating of 25 V. Surface mount SOT-23 package with 3 pins. Low on-resistance of 450 mΩ for efficient conduction. Maximum power dissipation of 350 mW for reliable operation.

Wide operating temperature range from -55°C to 150°C. Typical gate charge 1.64 nC enabling fast switching. Robust gate-source voltage ±8 V maximum. Compact physical dimensions: length 2.92 mm, width 1.3 mm, height 930 μm.

This MOSFET is suitable for use in industrial controls, power supplies, signal switching, and other electronic applications that require compact, reliable, and efficient transistor performance. onsemi’s proprietary UniFET technology ensures ruggedness, low on-resistance, and dependable operation for demanding environments.

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