$0.70
$0.68
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon SIPMOS N-Channel MOSFET 1.8 A 60 V Enhancement 4-Pin SOT-223 BSP295H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP295H6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Supports a maximum continuous drain current of 1.8 A.
- Maximum drain-source voltage rating of 60 V ensures reliable performance.
- Features low maximum drain-source resistance of 300mΩ for efficient conduction.
- Wide gate-source voltage range from -20 V to +20 V allows flexible control.
- Maximum power dissipation of 1.8 W supports effective heat management.
- Qualification to AEC-Q101 automotive standard confirms high reliability.
- Compact SOT-223 surface mount package with 4 pins for space-saving design.
- Operating temperature range from -55°C to 150°C suits diverse environments.
Product Description
Infineon BSP295H6327XTSA1 is a SIPMOS N-Channel MOSFET designed for high-performance industrial and automotive applications. This device supports a maximum continuous drain current of 1.8 A and a drain-source voltage of 60 V, making it suitable for power management and signal amplification tasks.
The MOSFET features a low maximum drain-source resistance of 300 milliohms, enhancing conduction efficiency and reducing power losses. Its gate-source voltage tolerance ranges broadly from -20 V to +20 V, offering versatile control capabilities in various circuits. The maximum power dissipation rating is 1.8 W, enabling the component to handle thermal stresses effectively during operation.
Packaged in a compact 4-pin SOT-223 surface mount, this MOSFET ensures ease of integration into compact electronic circuits. It operates reliably across a wide temperature range from -55°C up to 150°C, and conforms to the AEC-Q101 automotive standard, underscoring its robustness and suitability for automotive electronic control units and other demanding environments.
Applications include power management systems, motor drive circuits, and general-purpose switching in automation and electronic devices. Its low typical gate charge of 14 nC facilitates fast switching and optimized performance, while the modest forward voltage drop of 1.1 V supports overall energy efficiency.
Supports a maximum continuous drain current of 1.8 A. Rated for maximum drain-source voltage of 60 V. Low maximum drain-source resistance of 300mΩ ensures conduction efficiency. Wide gate-source voltage range of -20 V to +20 V.
Maximum power dissipation of 1.8 W. Qualified to AEC-Q101 automotive standard for reliability. Compact 4-pin SOT-223 surface mount package. Operating temperature range -55°C to 150°C. Typical gate charge of 14 nC for fast switching.
Forward voltage of 1.1 V for efficient operation.
This MOSFET is ideal for industrial, automotive, and electronic applications requiring high efficiency and reliable power control. Explore more specialized semiconductor components and electronic products at EnvMart for your project needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 1.8 A.
It has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation is rated at 1.8 W.
The typical gate charge is 14 nC, facilitating fast switching performance.
This MOSFET operates within a temperature range of -55°C to 150°C.
It is packaged in a compact 4-pin SOT-223 surface mount package.
The maximum gate-source voltage tolerance is from -20 V to +20 V.
The maximum drain-source resistance is 300 mΩ, ensuring efficient conduction.
Yes, it is qualified to the AEC-Q101 automotive standard, confirming its reliability.
The dimensions are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
This model utilizes an N-channel type configuration.
It is suitable for power management systems, motor drive circuits, and general-purpose switching in electronic devices.
Related Products
Other Products from this brand
Recently Viewed Products
$3,026.42
$2,935.63
-3%
New
$0.70
$0.68
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent