Infineon SIPMOS N-Channel Depletion MOSFET 21mA 600V SOT-23 3-Pin Surface Mount BSS126H6327XTSA2

Infineon BSS126H6327XTSA2 is a SIPMOS N-Channel depletion mode MOSFET designed for high-voltage switching and control in compact surface-mount circuits. Featuring a maximum drain-source voltage of 600V and continuous drain current of 21mA, this device operates efficiently in power conversion, gate protection, and signal conditioning applications.

The compact 3-pin SOT-23 package suits dense PCB layouts where space saving is critical. With a typical gate charge of 1.4nC and a wide gate-source voltage tolerance from -20V to +20V, this MOSFET enables fast switching and flexible drive conditions.

Rated for power dissipation of 500mW and operable across a wide temperature range from -55°C up to 150°C, it is suitable for industrial, automotive, and electronic applications requiring reliable performance under demanding environmental conditions.

The intrinsic body diode features a forward voltage drop of 1.2V, providing reverse conduction capabilities important for flyback or snubber circuits in power supplies. Its low maximum drain-source resistance (700Ω) minimizes off-state leakage current, improving efficiency in low-current control loops.

This component is manufactured to meet the AEC-Q101 automotive standard, ensuring qualification for automotive sensor and control modules requiring high reliability. This MOSFET supports high-voltage switching applications with a maximum drain-source voltage of 600V.

The device features a low maximum drain-source resistance of 700Ω to minimize leakage currents. A continuous drain current rating of 21mA enables reliable low-current control circuits. Typical gate charge of 1.4nC allows for fast switching transitions.

Wide gate-source voltage tolerance of -20V to +20V supports flexible driving voltages. Power dissipation rating of 500mW allows for moderate thermal loads. Suitable for surface-mount PCB designs using the compact SOT-23 package.

Operational temperature range from -55°C to 150°C ensures reliability under harsh environments. Intrinsic diode with forward voltage of 1.2V supports reverse conduction protection. Complies with AEC-Q101 automotive standard for robust automotive applications.

This MOSFET is ideal for industrial, electronic, and automotive applications including gate protection circuits, low-current flyback networks, sensor modules, and compact power supply designs.

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