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Infineon N-Channel IGBT Module 1200 V 105 A 355 W Clamp Mount AG-ECONO3-3 FP75R12KE3BOSA1

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Infineon N-Channel IGBT Module 1200 V 105 A 355 W Clamp Mount AG-ECONO3-3 FP75R12KE3BOSA1

Name: Infineon N-Channel IGBT Module 1200 V 105 A 355 W Clamp Mount AG-ECONO3-3 FP75R12KE3BOSA1
Brand: Infineon
SKU: 185113
Price: 139.56 USD
Availability: InStock

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Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	17mm
Length	122mm
Model	FP75R12KE3BOSA1
Width	62mm
Mount Type	Clamp
Maximum Operating Temperature	125°C
Package Type	AG-ECONO3-3
Minimum Operating Temperature	-40°C
Standards/Approvals	RoHS
Maximum Continuous Collector Current Ic	105A
Maximum Collector Emitter Voltage Vceo	1200V
Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
Channel Type	N
Maximum Power Dissipation Pd	355W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

The clamp mount AG-ECONO3-3 package ensures secure mechanical attachment.
Supports maximum power dissipation of 355 W for elevated power throughput.
Features a fast switching speed of 0.26 microseconds to reduce transition losses.
Operates reliably across a wide temperature range from -40°C to 125°C.
Max gate-emitter voltage limit of ±20 V for robust gate drive tolerance.
Low collector emitter saturation voltage of 2.2 V minimizes conduction losses.
Suitable for industrial drives, inverters, and power conversion applications.
RoHS compliant ensuring environmentally friendly production standards.

Product Description

Infineon FP75R12KE3BOSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module designed to handle high voltage and current loads suitable for industrial and power conversion applications. Rated for a maximum collector emitter voltage of 1200 V and a continuous collector current of 105 A, this module delivers robust performance under demanding conditions.

The device comes in a clamp-mount AG-ECONO3-3 package, providing firm mechanical attachment and straightforward servicing. It supports a maximum power dissipation of 355 W, enabling high power throughput for efficient operation.

With a switching speed of 0.26 microseconds, the module reduces switching losses, enhancing energy efficiency in motor control and inverter systems. The gate-emitter voltage must be maintained within ±20 V to ensure reliable switching and to protect against gate-oxide damage.

Its operating temperature range from -40°C to 125°C allows use in harsh thermal environments encountered in industrial drives and power electronics. This IGBT module is ideal for applications such as motor drives, industrial inverter stages, and power converter assemblies where low conduction and switching losses are critical.

The clamp mounting style facilitates quick installation and maintenance without specialized tools. Low saturation voltage improves conduction efficiency, reducing heat generation. RoHS compliant ensuring environmentally friendly production standards.

Dimensions are compact with a length of 122 mm, width of 62 mm, and height of 17 mm. Non-automotive grade suitable for general industrial and commercial power electronics applications. Explore more IGBT Modules and power semiconductor solutions at EnvMart for your industrial and manufacturing needs.