Infineon N-Channel MOSFET 381 A, 40 V, 8-Pin SuperSO8 Package BSC0902NSIATMA1

Infineon BSC0902NSIATMA1 is an N-Channel MOSFET designed for power electronics with a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V. Housed in an 8-pin SuperSO8 package measuring 5 x 6 mm, this device utilizes OptiMOS technology which integrates a monolithic Schottky-like diode.

Its optimized performance makes it well-suited for high-efficiency Buck converter applications and other power management solutions in industrial and commercial settings. With superior thermal resistance and Pb-free lead plating, it ensures reliability under demanding conditions.

The MOSFET is RoHS compliant and halogen-free as per IEC61249-2-22 standards, supporting environmental safety requirements. It operates safely within a wide temperature range from -55°C to 175°C, accommodating diverse application environments.

Key electrical parameters include a low maximum drain-source resistance (Rds) of 0.7 mΩ, typical gate charge of 80 nC at Vgs, and a maximum power dissipation of 81 W, all contributing to efficient power switching and minimal losses. The device is surface mount type with 8 pins, facilitating compact PCB layouts.

This component is ideal for use in industrial electronics, power supplies, automotive electronics (non-automotive standard), and manufacturing equipment requiring robust semiconductor components.

OptiMOS power MOSFET technology. Integrated Schottky-like diode for improved efficiency. High maximum continuous drain current of 381 A. Low Rds(on) of 0.7 mΩ reducing conduction losses. RoHS compliant and halogen-free materials.

Wide operating temperature range from -55°C to 175°C. Maximum power dissipation rating of 81 W. Compact 8-pin SuperSO8 surface mount package. Discover more semiconductor products and power MOSFETs at EnvMart for your industrial and electronic component needs.