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Infineon N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 Package, Optimized Buck Converter BSC0902NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC0902NSIATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for high-performance buck converter applications.
- Integrated monolithic Schottky-like diode for enhanced efficiency.
- Low drain-source resistance of 0.7 milliohms for reduced power loss.
- Typical gate charge of 80 nC at gate-source voltage.
- Maximum power dissipation rating of 81 W for robust operation.
- Wide operating temperature range from -55°C to 175°C.
- Surface mount design in compact 5 x 6 mm SuperSO8 package.
- RoHS compliant, Pb-free lead plating, halogen-free construction.
Product Description
Infineon BSC0902NSIATMA1 is a high-performance N-Channel MOSFET designed for power management and switching applications. It supports a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, making it ideal for demanding power electronics circuits.
This MOSFET features an 8-pin SuperSO8 package measuring 5 x 6 mm, which offers superior thermal resistance and compactness suitable for surface mount technology (SMT) assemblies. Included in the device is an integrated monolithic Schottky-like diode, which enhances reverse recovery characteristics and overall efficiency in buck converter topologies.
The device has a low on-resistance of 0.7 milliohms, minimizing conduction losses and improving power efficiency. The typical gate charge of 80 nC provides fast switching while keeping gate drive losses low.
BSC0902NSIATMA1 can operate over a wide temperature range from -55°C to 175°C, allowing reliability in harsh industrial and automotive environments. The maximum power dissipation rating of 81 W supports high load conditions.
Optimized for use in industrial power supplies and automotive powertrain systems. Suitable for laboratory power electronics, commercial power conversion, and manufacturing equipment. Compact packaging and thermal performance facilitate integration in high-density electronic assemblies.
Set contains a single MOSFET device in 8-pin SuperSO8 form factor. Explore more MOSFETs and semiconductor devices from Infineon in EnvMart’s Electronics & Electricals category for diverse applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
This MOSFET has a drain-source voltage rating of 40 V.
The on-resistance is 0.7 milliohms, which helps to minimize conduction losses.
The typical gate charge is 80 nC at the gate-source voltage.
The maximum power dissipation rating is 81 W, allowing for robust operation under high load conditions.
It operates over a wide temperature range from -55°C to 175°C.
This model is packaged in an 8-pin SuperSO8 package, measuring 5 x 6 mm.
Yes, this MOSFET is RoHS compliant, featuring Pb-free lead plating and halogen-free construction.
It is optimized for high-performance buck converter applications and is suitable for industrial power supplies and automotive powertrain systems.
The forward voltage of the integrated monolithic Schottky-like diode is 1 V.
The maximum gate-source voltage is 20 V.
This model supports surface mount technology (SMT) assemblies.
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