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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 4-Pin LFPAK56E PSMN3R5-80YSFX

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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 4-Pin LFPAK56E PSMN3R5-80YSFX

Name: Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 4-Pin LFPAK56E PSMN3R5-80YSFX
Brand: Nexperia
SKU: 178860
Price: 2.79 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PSMN3R5-80YSFX
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	LFPAK56E
Minimum Operating Temperature	-55°C
Interfaces	USB-PD adapters
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Maximum Power Dissipation Pd	81W
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET is qualified for industrial and consumer applications with a maximum operating temperature of 175 °C.
It features a low gate charge times RDS(on) figure of merit, enabling efficient high-speed switching.
The device is avalanche rated and tested for strong avalanche energy tolerance, enhancing durability.
Its low reverse recovery charge (Qrr) reduces switching losses and spiking in power circuits.
Suitable for synchronous rectification, BLDC motor control, USB-PD adapters, and DC-DC converters.
Package type LFPAK56E with surface mount design facilitates compact PCB layouts.
Maximum power dissipation is 81 W, supporting robust power handling capabilities.
The gate-source voltage maximum rating is ±20 V for flexible driving.

Product Description

Nexperia PSMN3R5-80YSFX is a high-performance N-channel MOSFET housed in the LFPAK56E surface mount package. It provides a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, making it ideal for power switching applications requiring efficient and reliable operation. The device supports a wide operating temperature range from -55 °C to 175 °C, enabling usage in demanding industrial and consumer electronics environments.

Designed with a low gate charge multiplied by on-resistance (QG x RDS(on)) figure of merit, this MOSFET ensures high efficiency during rapid switching events. It also exhibits low reverse recovery charge, reducing power losses and voltage spikes in synchronous rectifier and switching regulator topologies. The MOSFET is avalanche rated and tested for strong avalanche energy rating (Eas), which improves robustness against transient energy surges.

This device is optimal for implementations including synchronous rectifiers in AC-DC and DC-DC power supplies, BLDC motor control systems, USB Power Delivery adapters, and various full-bridge and half-bridge circuit topologies. The LFPAK56E package with four pins supports surface mount technology, facilitating compact and thermal-efficient PCB designs.

High maximum continuous drain current of 10.3 A at 30 V drain-source voltage. Maximum power dissipation capacity of 81 W for demanding power applications. Wide temperature tolerance from -55 °C to 175 °C. Low gate charge and RDS(on) for improved efficiency in power switching.

Robust avalanche energy rating for reliable transient handling. Surface mount LFPAK56E package optimizes PCB space and heat dissipation. Supports synchronous rectification, BLDC motors, and USB-PD adapters.

Nexperia products are engineered for reliability and efficiency in industrial, electronic components, power management, and semiconductor applications. Explore more Nexperia semiconductors and MOSFETs on EnvMart for comprehensive electronics solutions.