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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 2ED020I12FAXUMA2 |
| Output Current | 2A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC-36 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | DIN EN 60747-5-2 |
| Pin Count | 36 |
| Minimum Supply Voltage | 20V |
| Fall Time | 350ns |
| Driver Type | IGBT |
Infineon 2ED020I12FAXUMA2 is a dual high-side IGBT gate driver module engineered for efficient power management applications. It provides two fully isolated driver channels capable of delivering typical 2 A source and sink currents. Packaged in a SOIC-36 form factor, this device supports operational voltage at 20V which is suitable for controlling high-voltage IGBTs and SiC MOSFETs.
Designed for demanding industrial environments, it operates reliably across a wide temperature range from -40°C to 150°C, making it ideal for use in harsh operating conditions. The gate driver features a fast fall time of 350 ns, which ensures rapid switching and reduced losses, enhancing overall system efficiency.
The device also incorporates an active Miller clamp which enhances protection against voltage spikes during switching transients. It conforms to DIN EN 60747-5-2 semiconductor standards, ensuring quality and interoperability in power electronics controls.
This module's galvanic isolation between input and output channels prevents unwanted interference and enhances system safety. Its compact SOIC-36 footprint allows seamless integration into printed circuit boards for automated production lines.
Common applications include power conversion circuits, motor drives, industrial automation, renewable energy inverters, and automotive electronics requiring robust high-side gating control. The module supports improved performance and longevity in complex electronic systems.
Provides dual channel galvanically isolated IGBT outputs with 2 A source and sink current capability. Compact SOIC-36 package designed for easy PCB integration and automated assembly. Operates reliably between -40°C and 150°C for industrial-grade temperature endurance.
Features 350 ns fall time ensuring fast switching performance for power electronics. Includes active Miller clamp for improved device protection in switching applications. Meets DIN EN 60747-5-2 standard ensuring compliance with semiconductor gate driver requirements.
Supports a maximum supply voltage of 20V allowing broad compatibility. Ideal for driving IGBTs and SiC MOSFETs in industrial, laboratory, and power management systems. Explore more Infineon semiconductor products and IGBT Gate Drivers on EnvMart for all your power management needs.
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