Infineon 650 V Half-Bridge Gate Driver 2 Drivers, -414.2 mA Output Current, 8-Pin DSO-8 Package, 25 V Max 2ED2108S06FXUMA1

The Infineon 2ED2108S06FXUMA1 gate driver is a high-performance 650 V half-bridge driver featuring integrated bootstrap diode technology and Infineon's Thin-Film-Silicon on Insulator (SOI) manufacturing process. With two drivers integrated in a compact 8-pin DSO-8 package, it supports robust gate-driving functions in power management applications.

This component boasts an output current rating of -414.2 mA, enabling effective gate driving of power switches, and operates within a maximum supply voltage of 25 V. Its fast switching capabilities are highlighted by 80 ns fall time and 200 ns rise time, optimizing efficiency in high-frequency switching contexts.

The driver supports a wide ambient operating temperature range from -40°C up to 125°C, ensuring reliability in harsh industrial and automotive environments. Incorporating an internal dead time of 540 ns with external resistive programmability enhances protection against shoot-through faults in half-bridge topologies.

Additional features include separate high and low voltage pins for maximizing creepage and clearance distances in variants, and separate logic and power ground configurations to reduce noise influence. The floating channel design facilitates bootstrap operation through an integrated ultra-fast, low resistance bootstrap diode, while Schmitt trigger inputs provide hysteresis for improved noise immunity on control signals.

Applications span industrial power management, motor drive systems, and other electronic control devices demanding reliable, efficient gate driving solutions. The device complies with RoHS standards, endorsing environmental compliance and sustainability.

Operates with a maximum supply voltage of 25 V. Output current rated at -414.2 mA for effective driving capability. Features fast switching times with 80 ns fall and 200 ns rise times. Designed for operation across a wide temperature range from -40°C to 125°C.

Integrates Infineon Thin-Film Silicon on Insulator technology for enhanced performance. Includes internal 540 ns dead time with programmable extension via external resistor. Employs a floating channel for bootstrap operation with ultra-fast, low resistance bootstrap diode.

Schmitt trigger inputs ensure noise immunity and stable logic levels. Complies with RoHS standards, ensuring environmental safety. Choose from EnvMart's comprehensive range of semiconductor components and Gate Drivers for your industrial and electronics design needs.