Infineon IPA N-Channel MOSFET 84 A 40 V P-Mode 3-Pin TO-220 IPA80R280P7XKSA1

Infineon IPA80R280P7XKSA1 is a high-performance N-channel MOSFET designed for power switching in demanding electronic systems. It supports a maximum continuous drain current of 84 A and a maximum drain-source voltage of 40 V, making it suitable for mid-voltage power stages. The device utilizes a 3-pin TO-220 package optimized for surface mounting to heat sinks or PCBs, ensuring excellent thermal dissipation.

This MOSFET boasts a very low on-resistance of 2.9 mΩ, which significantly reduces conduction losses and improves overall efficiency. With a maximum power dissipation of 81 W, it can handle sustained thermal loads in industrial and commercial applications.

The gate charge of 80 nC at Vgs allows for predictable switching energy management, while the forward voltage of 0.9 V minimizes voltage drop during conduction phases. It operates safely within a gate-source voltage limit of 20 V. The device is specified to perform reliably across an extended ambient temperature range from -55°C to +150°C, catering to heat-intensive and wide temperature range environments.

Its typical applications include power supplies requiring low on-resistance transistors, motor drive stages with high current demands, DC-DC converters in industrial control systems, battery management systems, and power distribution networks. The MOSFET is RoHS compliant, ensuring conformity with environmental safety standards.

Package contents include the MOSFET itself with the specified 3-pin TO-220 form factor, engineered for reliable mounting and electrical performance. This product is ideal for industrial, manufacturing, HVAC, automotive electronics, and laboratory power electronics contexts.

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