Infineon N-Channel Power MOSFET, 84 A Maximum Continuous Drain Current, 40 V Drain Source Voltage, 3-Pin IPA60R180P7XKSA1

The Infineon IPA60R180P7XKSA1 is an N-Channel Power MOSFET housed in a TO-220 3-pin package, engineered to deliver high efficiency in power switching and amplification applications.

It supports a maximum continuous drain current of 84 A and a drain-source voltage of 40 V, making it suitable for various industrial and electronic component uses requiring robust current capability and low voltage operation.

The MOSFET features a low typical gate charge of 80 nC at Vgs, facilitating fast switching with reduced energy loss. It boasts a maximum power dissipation rating of 81 W, ensuring stable thermal performance during prolonged usage. Operational temperature ranges from -55°C to 175°C, allowing use in harsh industrial and automotive environments.

Designed with a forward voltage of 1.2 V, this device offers reduced conduction losses, improving overall system efficiency. It complies with RoHS directives, ensuring environmentally friendly manufacturing and disposal.

This MOSFET supports surface mount technology and is highly suitable for use in power management, discrete semiconductor applications, electronic devices, manufacturing controls, and automotive electronics that do not require automotive standards certification.

Maximum continuous drain current of 84 A. Drain-source voltage rating of 40 V. Power dissipation up to 81 W. Operating temperature range from -55°C to 175°C. Package type TO-220 with 3 pins. RoHS compliant for environmental safety.

Typical gate charge of 80 nC for efficient switching. Forward voltage of 1.2 V reduces conduction loss. Supports surface mount technology. Explore a wide range of Infineon MOSFETs and related semiconductor products on EnvMart for your industrial and laboratory applications.