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Infineon N-Channel Power MOSFET, 84 A Maximum Continuous Drain Current, 40 V Drain Source Voltage, 3-Pin IPA60R180P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPA60R180P7XKSA1
Mount Type Surface
Series IPA
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 84A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 2.9mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 84 A ensures high current handling capability.
  • Maximum drain-source voltage of 40 V suits low voltage applications.
  • Package Type is TO-220 with 3 pins supporting through-hole mounting.
  • Typical gate charge of 80 nC at Vgs regulates efficient switching performance.
  • Power dissipation up to 81 W allows reliable operation under load.
  • Operating temperature ranges from -55°C to 175°C for industrial environments.
  • Forward voltage of 1.2 V optimizes conduction losses.
  • Compliant with RoHS standards ensuring environmental safety.

Product Description

The Infineon IPA60R180P7XKSA1 is an N-Channel Power MOSFET housed in a TO-220 3-pin package, engineered to deliver high efficiency in power switching and amplification applications.

It supports a maximum continuous drain current of 84 A and a drain-source voltage of 40 V, making it suitable for various industrial and electronic component uses requiring robust current capability and low voltage operation.

The MOSFET features a low typical gate charge of 80 nC at Vgs, facilitating fast switching with reduced energy loss. It boasts a maximum power dissipation rating of 81 W, ensuring stable thermal performance during prolonged usage. Operational temperature ranges from -55°C to 175°C, allowing use in harsh industrial and automotive environments.

Designed with a forward voltage of 1.2 V, this device offers reduced conduction losses, improving overall system efficiency. It complies with RoHS directives, ensuring environmentally friendly manufacturing and disposal.

This MOSFET supports surface mount technology and is highly suitable for use in power management, discrete semiconductor applications, electronic devices, manufacturing controls, and automotive electronics that do not require automotive standards certification.

Maximum continuous drain current of 84 A. Drain-source voltage rating of 40 V. Power dissipation up to 81 W. Operating temperature range from -55°C to 175°C. Package type TO-220 with 3 pins. RoHS compliant for environmental safety.

Typical gate charge of 80 nC for efficient switching. Forward voltage of 1.2 V reduces conduction loss. Supports surface mount technology. Explore a wide range of Infineon MOSFETs and related semiconductor products on EnvMart for your industrial and laboratory applications.

Infineon N-Channel Power MOSFET, 84 A Maximum Continuous Drain Current, 40 V Drain Source Voltage, 3-Pin IPA60R180P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPA60R180P7XKSA1 is 84 A.

This model has a maximum drain-source voltage rating of 40 V.

The maximum power dissipation for this MOSFET is up to 81 W.

It operates within a temperature range of -55°C to 175°C.

The typical gate charge at Vgs for this MOSFET is 80 nC.

The Infineon IPA60R180P7XKSA1 is housed in a TO-220 package type with 3 pins.

The forward voltage for this model is 1.2 V, which helps reduce conduction losses.

The maximum gate-source voltage for this MOSFET is 20 V.

The maximum drain-source resistance is rated at 2.9 mΩ.

Yes, this model complies with RoHS standards for environmental safety.

This device is suitable for power management, discrete semiconductor applications, and automotive electronics that do not require automotive standards certification.

This model features an N-channel configuration.

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