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Infineon N-Channel MOSFET 381 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin BSC037N08NS5TATMA1

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Infineon N-Channel MOSFET 381 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin BSC037N08NS5TATMA1

Name: Infineon N-Channel MOSFET 381 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin BSC037N08NS5TATMA1
Brand: Infineon
SKU: 178350

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSC037N08NS5TATMA1
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	381A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

High performance N-Channel MOSFET optimized for switching power supply applications.
Supports a maximum continuous drain current of 381 amperes for high current capacity.
Rated for a maximum drain-source voltage of 40 volts ensuring robust operation.
Low maximum drain-source resistance of 0.7 milliohms supports efficient conduction.
Surface mount device with compact 8-pin SuperSO8 5 x 6 mm package footprint.
Maximum power dissipation rated at 81 watts for thermal reliability.
Gate charge of 80 nanoCoulombs at Vgs for fast switching performance.
Wide operating temperature range from -55°C to 175°C for industrial grade use.

Product Description

The Infineon BSC037N08NS5TATMA1 is a high-performance N-Channel MOSFET designed for industrial and power management applications. Featuring a maximum continuous drain current of 381 A and voltage rating of 40 V, this device supports demanding power switching scenarios.

Its compact 8-pin SuperSO8 5 x 6 mm surface mount package offers space-saving integration while providing low resistance conduction with a maximum Rds(on) of 0.7 milliohms. This ensures efficient power conversion and reduced heat generation.

The MOSFET has a maximum power dissipation of 81 W and a typical gate charge of 80 nC at gate-source voltage, enabling fast switching speed for modern power supplies. It operates reliably across a wide temperature range from -55°C to 175°C, making it ideal for industrial environments.

Infineon’s OptiMOS 5 technology delivers superior thermal resistance and robust performance, further supported by RoHS compliance indicating environmentally friendly design. This MOSFET is optimized for high performance switched-mode power supplies (SMPS) and other power electronics requiring high current capacity in a compact form.

High current capacity suitable for industrial power switching applications. Low on-resistance for efficient energy usage and reduced heat losses. Wide temperature operation ensuring stability in harsh environments. Compact package enabling dense PCB layout designs.

RoHS compliant ensuring environmental safety for manufacturing.

This Infineon MOSFET is commonly used in power supplies, motor control, industrial automation, and other high power electronics where high current switching and thermal management are required. Explore related MOSFETs and semiconductor components in EnvMart’s electronics category for compatible solutions.