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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC066N06NSATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon BSC066N06NSATMA1 is a high-current N-channel MOSFET engineered for power management solutions requiring a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V. This device is supplied in an 8-pin SuperSO8 5x6 surface-mount package designed for automated high-volume assembly.
It features an exceptionally low on-resistance of 0.7mΩ which reduces conduction losses and supports a power dissipation rating of 81 W, allowing efficient thermal handling in demanding electrical environments. The typical gate charge of 80 nC and maximum gate-source voltage of 20 V allow for fast switching performance and robust gate drive margins.
With an operating temperature range from -55°C up to +150°C, this MOSFET is suitable for a variety of industrial and commercial applications where reliable high-current switching is needed. The device complies with RoHS environmental directives, ensuring lead-free, environmentally friendly use, while it is not certified for automotive standards.
This MOSFET is applicable in high-current DC-DC power conversion racks, motor drive stages requiring sustained high current, battery management systems, and synchronous rectification in switched-mode power supplies.
Its surface-mount SuperSO8 package facilitates compact design and efficient PCB layout, making it ideal for modern electronic designs in industrial, commercial, and manufacturing domains.
This MOSFET features a low 0.7mΩ RDS(on) resistance to minimize conduction losses. Supports power dissipation up to 81 W for reliable thermal performance. Operates safely across a temperature range from -55°C to +150°C. Typical gate charge of 80 nC enables efficient switching control.
Maximum gate-source voltage of 20 V allows strong gate drive margins. Complies with RoHS standards ensuring environmental compliance. Supplied in an 8-pin SuperSO8 5x6 surface-mount package for automated assembly. Explore more products in our MOSFET category at EnvMart for reliable, high-performance semiconductor solutions.
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