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Infineon N-Channel MOSFET 40 V, 381 A Continuous Drain Current, 0.7mΩ RDS(on), 81 W Power Dissipation BSC066N06NSATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC066N06NSATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature +150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features a low 0.7mΩ RDS(on) resistance to minimize conduction losses.
  • It supports a maximum power dissipation of 81 W for efficient thermal management.
  • The device is packaged in an 8-pin SuperSO8 5x6 surface-mount package suitable for automated assembly.
  • Operating temperature range from -55°C to +150°C makes it suitable for harsh environments.
  • It has a typical gate charge of 80 nC and a maximum gate-source voltage of 20 V, enabling fast and robust switching.
  • Complies with RoHS standards but is not automotive grade certified.
  • Ideal for use in high-current DC-DC converters, motor-drive stages, battery management systems, and synchronous rectification applications.

Product Description

Infineon BSC066N06NSATMA1 is a high-current N-channel MOSFET engineered for power management solutions requiring a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V. This device is supplied in an 8-pin SuperSO8 5x6 surface-mount package designed for automated high-volume assembly.

It features an exceptionally low on-resistance of 0.7mΩ which reduces conduction losses and supports a power dissipation rating of 81 W, allowing efficient thermal handling in demanding electrical environments. The typical gate charge of 80 nC and maximum gate-source voltage of 20 V allow for fast switching performance and robust gate drive margins.

With an operating temperature range from -55°C up to +150°C, this MOSFET is suitable for a variety of industrial and commercial applications where reliable high-current switching is needed. The device complies with RoHS environmental directives, ensuring lead-free, environmentally friendly use, while it is not certified for automotive standards.

This MOSFET is applicable in high-current DC-DC power conversion racks, motor drive stages requiring sustained high current, battery management systems, and synchronous rectification in switched-mode power supplies.

Its surface-mount SuperSO8 package facilitates compact design and efficient PCB layout, making it ideal for modern electronic designs in industrial, commercial, and manufacturing domains.

This MOSFET features a low 0.7mΩ RDS(on) resistance to minimize conduction losses. Supports power dissipation up to 81 W for reliable thermal performance. Operates safely across a temperature range from -55°C to +150°C. Typical gate charge of 80 nC enables efficient switching control.

Maximum gate-source voltage of 20 V allows strong gate drive margins. Complies with RoHS standards ensuring environmental compliance. Supplied in an 8-pin SuperSO8 5x6 surface-mount package for automated assembly. Explore more products in our MOSFET category at EnvMart for reliable, high-performance semiconductor solutions.

Infineon N-Channel MOSFET 40 V, 381 A Continuous Drain Current, 0.7mΩ RDS(on), 81 W Power Dissipation BSC066N06NSATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 381 A.

It features a low RDS(on) resistance of 0.7 mΩ, which helps minimize conduction losses.

This MOSFET supports a maximum power dissipation of 81 W, allowing for efficient thermal management.

The operating temperature range is from -55°C to +150°C, making it suitable for harsh environments.

The typical gate charge is 80 nC, enabling efficient switching control.

The maximum gate-source voltage is 20 V, providing strong gate drive margins.

It is packaged in an 8-pin SuperSO8 5x6 surface-mount package, suitable for automated assembly.

Yes, it complies with RoHS standards, ensuring environmentally friendly use.

This MOSFET is ideal for high-current DC-DC converters, motor-drive stages, battery management systems, and synchronous rectification applications.

The maximum drain-source voltage is 40 V.

This model has a pin count of 8.

It features an N-channel configuration, suitable for various power management solutions.

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