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Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN Surface Mount IQE050N08NM5CGATMA1

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Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN Surface Mount IQE050N08NM5CGATMA1

Name: Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN Surface Mount IQE050N08NM5CGATMA1
Brand: Infineon
SKU: 177454
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	3.3mm
Model	IQE050N08NM5CGATMA1
Mount Type	Surface
Series	IQE
Maximum Operating Temperature	150°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	253A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	0.85mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	730mV

Key Features

High current capacity with 253 A maximum continuous drain current.
Low drain-source resistance of 0.85 mOhm reduces power losses.
Maximum power dissipation rated at 81 W for efficient thermal management.
Compact 3.3 mm length surface mount PQFN package with 8 pins.
Wide operating temperature range from -55°C to 150°C for demanding environments.
Typical gate charge of 80 nC at gate-source voltage improves switching performance.
Maximum gate-source voltage of 16 V to prevent damage under transient conditions.
Forward voltage of 730 mV ensuring efficient conduction.

Product Description

Infineon IQE050N08NM5CGATMA1 is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 253 A and a maximum drain-source voltage of 30 V. It is housed in a compact 8-pin PQFN surface mount package with a length of 3.3 mm, designed for high power density and efficient PCB layouts. This MOSFET supports demanding industrial and automotive applications that require reliable switching and low conduction losses.

The device offers a low drain-source resistance of 0.85 mOhm, minimizing power dissipation and improving overall system efficiency. With a maximum power dissipation rating of 81 W, it ensures robust thermal handling, suitable for environments with wide temperature ranges from -55°C up to 150°C. The typical gate charge of 80 nC at a gate-source voltage of 16 V enables fast switching performance, while the forward voltage of 730 mV ensures effective conduction with minimal voltage drop.

Compliant with RoHS standards and specifically approved to AEC-Q101 automotive requirements, this MOSFET is well-suited for automotive electronics, power supplies, industrial controls, and high-density power conversion systems. Its surface mount PQFN 8-pin form factor allows for optimal PCB layout design, improving thermal and electrical performance.

High continuous drain current capacity at 253 A. Low on-resistance of 0.85 mOhm for reduced losses. 81 W maximum power dissipation for thermal efficiency. Compact 3.3 mm length PQFN 8-pin surface mount package. Wide operational temperature range of -55°C to 150°C.

Typical gate charge of 80 nC enhances high-speed switching. Maximum 16 V gate-source voltage protects against overvoltage. Forward voltage of 730 mV ensures efficient current flow. RoHS compliant and automotive AEC-Q101 certified.

Designed for industrial, automotive, and high power applications.

This product is listed in the MOSFET category under discrete semiconductors, widely used in electronic component assemblies for power management and switching optimization. EnvMart offers this product as part of its semiconductor components portfolio, supporting industrial and automotive technology sectors.