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Infineon IQE Type N-Channel MOSFET 253A 30V 8-Pin PQFN IQE006NE2LM5CGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE006NE2LM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.73V |
Key Features
- Type N-Channel MOSFET designed for efficient power switching.
- Maximum continuous drain current of 253 A ensures robust operation.
- Rated for a maximum drain-source voltage of 30 V.
- Features an 8-pin PQFN package ideal for surface-mount assemblies.
- Low drain-source resistance of 1.2 mΩ improves efficiency.
- Typical gate charge Qg (at Vgs) is 80 nC for fast switching.
- Maximum power dissipation rated at 81 W.
- Operates reliably within a temperature range from -55°C to 175°C.
Product Description
The Infineon IQE Type N-Channel MOSFET, model IQE006NE2LM5CGATMA1, is a high-performance discrete semiconductor optimized for industrial, automotive, and advanced electronics applications. With a continuous drain current rating of 253 A and maximum drain-source voltage of 30 V, it supports demanding switching and power conversion tasks. Its 8-pin PQFN package offers a compact surface-mount form factor suitable for modern PCB layouts and highly automated manufacturing.
Designed for efficiency, the MOSFET features a low drain-source resistance of 1.2 mΩ, reducing conduction losses and improving thermal performance. Fast switching is enabled by a typical gate charge of 80 nC, making it suitable for high-frequency operation in power supplies, motor drives, and DC/DC converters.
Type N-Channel for high-speed switching. Maximum continuous drain current 253 A. Maximum drain-source voltage 30 V. 8-Pin PQFN surface-mount package. Low drain-source resistance 1.2 mΩ. Typical gate charge Qg of 80 nC. Maximum power dissipation of 81 W.
Wide operating temperature from -55°C to 175°C. RoHS compliant and meets automotive AEC-Q101 standards. Forward voltage of 0.73 V and max gate-source voltage 20 V.
Operating reliably from -55°C up to 175°C, this MOSFET is robust and suited for harsh environments. Full avalanche testing and RoHS compliance ensure quality and environmental stewardship. Automotive-grade AEC-Q101 certification enables its use in automotive powertrain, body, and advanced driver assistance systems (ADAS).
Applications span industrial power management, DC/DC converters, motor control, automotive ECUs, and high-efficiency switching power supplies. The Pb-free lead plating and halogen-free design meet strict industry and environmental standards. Integrated protection, compact PQFN footprint, and high current handling provide designers flexibility in compact, high-density electronic assemblies.
Explore more Infineon MOSFET solutions in the Electronics & Electricals category on EnvMart and discover compatible semiconductor and power management components for your next project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 253 A.
It has a maximum drain-source voltage rating of 30 V.
This model comes in an 8-pin PQFN package, suitable for surface-mount assemblies.
The typical gate charge (Qg) at Vgs is 80 nC, enabling fast switching capabilities.
The maximum power dissipation is rated at 81 W.
It features a low drain-source resistance of 1.2 mΩ, which improves efficiency.
It operates reliably within a temperature range from -55°C to 175°C.
This model meets the automotive AEC-Q101 standard, making it suitable for automotive applications.
The forward voltage for this device is 0.73 V.
The maximum gate-source voltage for this model is 20 V.
The country of origin for this MOSFET is India.
It is suitable for industrial power management, DC/DC converters, motor control, and automotive ECUs.
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