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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Surface Mount Package IQE008N03LM5ATMA1

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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Surface Mount Package IQE008N03LM5ATMA1

Name: Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Surface Mount Package IQE008N03LM5ATMA1
Brand: Infineon
SKU: 177453
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	3.3mm
Model	IQE008N03LM5ATMA1
Mount Type	Surface
Series	IQE
Maximum Operating Temperature	150°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	253A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	0.85mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	730mV

Key Features

Maximum continuous drain current of 253 amperes.
Maximum drain-source voltage rating of 30 volts for power switching applications.
Features very low on-resistance of 0.85 milliohms for enhanced efficiency.
Typical forward voltage drop of 730 millivolts to minimize conduction losses.
Maximum power dissipation of 81 watts suitable for heavy-duty environments.
Operating temperature range from -55°C to 150°C for reliability in harsh conditions.
Compliant with automotive standard AEC-Q101 ensuring robust automotive suitability.
Compact PQFN 3.3 mm x 3.3 mm package facilitates high power density and ease of PCB layout.

Product Description

Infineon IQE008N03LM5ATMA1 is a high-performance N-Channel MOSFET designed for power switching applications requiring low conduction losses and high current handling capacity. It features a compact 8-pin PQFN (3.3 mm by 3.3 mm) surface mount package which allows efficient thermal management and high power density integration on PCB layouts.

This MOSFET supports a maximum continuous drain current of 253 amperes and a drain-source voltage rating of 30 volts, making it suitable for demanding industrial, automotive, and electronic power circuits. The device offers a very low on-resistance of 0.85 milliohms, minimizing conduction losses to improve overall system efficiency and reduce thermal dissipation requirements.

The forward voltage drop is typically 730 millivolts, and the maximum power dissipation rating is 81 watts. These parameters ensure reliable operation under high load conditions and sustained power stress. The operating temperature range spans from -55°C to 150°C, enabling robust functionality even in extreme environments.

The IQE series, compliant with the automotive AEC-Q101 standard and RoHS directives, is suited for automotive, industrial, laboratory, and commercial applications where reliability and efficiency are paramount. Typical gate charge is 80 nanocoulombs at 16 V gate-source voltage, providing fast switching characteristics important in modern power electronics.

Maximum continuous drain current of 253 amperes. Maximum drain-source voltage rating of 30 volts. Low on-resistance of 0.85 milliohms for high efficiency. Compact PQFN 8-pin surface mount package (3.3 mm x 3.3 mm). Operating temperature range -55°C to 150°C for harsh environments.

Maximum power dissipation of 81 watts. Complies with automotive standard AEC-Q101 and RoHS. Typical gate charge of 80 nanocoulombs.

This Infineon MOSFET is ideal for use in automotive electronics, power supply regulation, industrial motor drives, renewable energy converters, and other high-current, low-voltage switching applications requiring reliable and efficient semiconductor components.

Explore our range of MOSFETs and semiconductor components at EnvMart for industrial-grade performance and technical support.