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Infineon IPL N-Channel MOSFET, 107 A, 700 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R200CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R200CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 107A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- Offers high continuous drain current of 107 amperes for heavy-duty operations.
- Capable of withstanding a maximum drain-source voltage of 700 volts.
- Features an enhancement mode channel with a low drain-source resistance of 95 milliohms.
- Typical gate charge is 80 nanocoulombs at Vgs, enabling fast switching.
- Maximum power dissipation rating of 81 watts to support high power loads.
- Wide operating temperature range from -40°C to 150°C ensures reliability in harsh environments.
- 5-pin ThinPAK 8x8 surface mount package for compact and efficient PCB layout.
- Complies with RoHS and automotive standard AEC-Q101 for quality and safety assurance.
Product Description
Infineon IPL65R200CFD7AUMA1 is a high-quality N-Channel MOSFET designed for demanding industrial and commercial applications demanding high efficiency and power density. This enhancement mode MOSFET operates at a maximum drain-source voltage of 700 V and delivers a continuous drain current of 107 A. Packaged in a robust 5-pin ThinPAK 8x8 surface mount format, it facilitates compact and thermally efficient PCB designs.
The device features a low gate charge of 80 nC, which leads to reduced switching losses and improved efficiency, making it suitable for resonant topologies in power management circuits. The maximum power dissipation rating of 81 W supports handling significant power loads in systems such as servers, telecommunications, solar power inverters, and electric vehicle charging stations.
Designed with industrial-grade operating temperatures from -40°C to 150°C, it operates reliably under harsh conditions. The MOSFET also includes a robust maximum gate-source voltage of 30 V and a forward voltage of 1 V, providing stable performance.
The device's ThinPAK 8x8 package offers excellent power density and thermal management in compact electronic assemblies. High continuous drain current of 107 A for demanding applications. 700 V maximum drain-source voltage for high voltage tolerance.
5-pin ThinPAK 8x8 surface mount package for space-saving design. Low typical gate charge of 80 nC for efficient switching. 81 W maximum power dissipation to support heavy loads. Wide operating temperature range (-40°C to 150°C) for durability.
Meets RoHS and AEC-Q101 automotive standards for quality. Suitable for industrial applications including servers, telecom, solar, and EV charging. Explore the EnvMart category for Semiconductor MOSFETs to find a wide range of power management components from trusted brands like Infineon.
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Frequently Asked Questions
The maximum continuous drain current of this model is 107 A, making it suitable for heavy-duty operations.
It can withstand a maximum drain-source voltage of 700 V, allowing for high voltage applications.
The typical gate charge is 80 nC at Vgs, which contributes to its efficient switching capabilities.
The maximum power dissipation rating is 81 W, supporting significant power loads in various applications.
It operates reliably within a wide temperature range of -40°C to 150°C, suitable for harsh environments.
This model is packaged in a 5-pin ThinPAK 8x8 surface mount format, facilitating compact PCB designs.
It complies with the AEC-Q101 automotive standard, ensuring quality and safety for automotive applications.
The maximum gate-source voltage is 30 V, which provides stable performance during operation.
The forward voltage is specified at 1 V, contributing to its overall efficiency.
The maximum drain-source resistance is 95 mΩ, which helps in reducing power losses during operation.
It is suitable for industrial applications including servers, telecommunications, solar power inverters, and electric vehicle charging stations.
The country of origin for this model is India, indicating its manufacturing location.
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