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Infineon IPL N-Channel MOSFET, 21 A, 650 V Enhancement Mode, 5-Pin ThinPAK 8x8 IPL65R160CFD7AUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 8.1mm
Model IPL65R160CFD7AUMA1
Mount Type Surface
Series IPL
Maximum Operating Temperature 150°C
Package Type ThinPAK 8x8
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 5
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 21A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1V

Key Features

  • Enhanced mode operation for improved switching performance.
  • Maximum continuous drain current of 21 amperes for high power handling.
  • 650 V drain-source voltage suitable for demanding applications.
  • ThinPAK 8x8 surface mount package with 5 pins for compact PCB design.
  • Maximum power dissipation of 171 W supports high thermal loads.
  • Low typical gate charge of 80 nC for reduced switching losses.
  • Forward voltage drop of 1 V enhances efficiency in circuits.
  • Operating temperature range from -40°C to 150°C for robust use.

Product Description

Infineon IPL65R160CFD7AUMA1 is a high-performance N-Channel MOSFET featuring a ThinPAK 8x8 package designed for surface mount applications. It supports a maximum continuous drain current of 21 A and drain-source voltage of 650 V, making it ideal for industrial power management solutions requiring robust and efficient devices.

This MOSFET operates in enhancement mode and provides low switching losses due to its significantly reduced gate charge, optimized turn-off behavior, and low reverse recovery charge. The device supports a maximum power dissipation of 171 W and is rated for operation from -40°C up to 150°C, suitable for harsh industrial environments.

The 5-pin ThinPAK 8x8 package enables compact and efficient surface mounting on PCB boards. The device meets RoHS compliance standards and is qualified under the automotive AEC-Q101 standard, ensuring reliability and safety in automotive and industrial applications.

Typical applications include industrial power supplies, resonant topologies, servers, telecom infrastructure, solar inverters, and electric vehicle charging stations. The Infineon CoolMOS CFD7 super junction technology enhances energy efficiency and power density compared to earlier generation devices.

Enhanced mode N-Channel MOSFET with 21 A continuous current. 650 V maximum drain-source voltage for high-voltage circuits. ThinPAK 8x8 surface mount package with 5 pins. Low gate charge of 80 nC reduces switching losses.

Forward voltage of 1 V improves conduction efficiency. Maximum power dissipation of 171 W supports demanding loads. Operating temperature range from -40°C to 150°C for diverse environments. AEC-Q101 automotive qualified and RoHS compliant.

Infineon's IPL65R160CFD7AUMA1 combines high efficiency and reliability in a compact package, making it an excellent choice for advanced power electronics in industrial and automotive sectors. Browse more semiconductor devices and MOSFET modules at EnvMart for your electrical component needs.

Infineon IPL N-Channel MOSFET, 21 A, 650 V Enhancement Mode, 5-Pin ThinPAK 8x8 IPL65R160CFD7AUMA1
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Frequently Asked Questions

The maximum continuous drain current of the Infineon IPL65R160CFD7AUMA1 is 21 A.

This model has a maximum drain-source voltage rating of 650 V, suitable for high-voltage applications.

The IPL65R160CFD7AUMA1 comes in a ThinPAK 8x8 package with 5 pins, designed for surface mounting.

The operating temperature range for this MOSFET is from -40°C to 150°C, making it suitable for harsh environments.

The typical gate charge for the IPL65R160CFD7AUMA1 is 80 nC, which helps in reducing switching losses.

This model supports a maximum power dissipation of 171 W, allowing it to handle demanding loads.

The IPL65R160CFD7AUMA1 is qualified under the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The forward voltage drop of this MOSFET is 1 V, which enhances efficiency in circuits.

The IPL65R160CFD7AUMA1 meets RoHS compliance standards, ensuring it is free from hazardous substances.

The maximum gate-source voltage rating for this MOSFET is 30 V, which is critical for its operation.

This device features an N-channel type, operating in enhancement mode for improved performance.

The maximum drain-source resistance (Rds) for this model is 95 mΩ, contributing to its efficiency.

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