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Infineon IPL N-Channel MOSFET 21 A 650 V Enhancement Mode 5-Pin ThinPAK 8x8 IPL65R160CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R160CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 21 A suitable for demanding power applications.
- 650 V maximum drain-source voltage ensures high voltage tolerance.
- ThinPAK 8x8 surface mount package with 5 pins for compact PCB designs.
- Enhancement channel mode providing efficient switching performance.
- Typical gate charge of 80 nC at Vgs for low switching losses.
- Maximum power dissipation rated at 171 W for robust thermal handling.
- Operates reliably across a wide temperature range from -40°C to 150°C.
- Conforms to RoHS and Automotive AEC-Q101 standards ensuring quality and safety.
Product Description
Infineon IPL65R160CFD7AUMA1 is a high-performance N-Channel MOSFET designed for efficient switching and power handling in industrial electronic circuits. Featuring a 21 A maximum continuous drain current and 650 V maximum drain-source voltage, this device is built with enhancement mode channel technology and housed in a compact 5-pin ThinPAK 8x8 surface mount package.
Its low on-resistance and reduced gate charge enable significant improvements in efficiency and power density compared to previous generations and competing devices. The MOSFET delivers a maximum power dissipation of 171 W, capable of operating reliably over a wide temperature range from -40°C to 150°C, making it suitable for harsh industrial environments.
Conformance to RoHS and AEC-Q101 automotive standards certifies the product’s quality and suitability for rugged automotive and industrial applications. The device finds ideal use in resonant topologies for power supplies, server and telecom equipment, solar power inverters, and electric vehicle charging stations, where maximizing efficiency and minimizing switching losses is critical.
Maximum continuous drain current of 21 A supports high power demands. 650 V drain-source voltage rating provides extra safety margin. Enhancement mode channel delivers excellent switching characteristics. ThinPAK 8x8 5-pin package ensures compact and reliable mounting.
Typical gate charge of 80 nC offers reduced switching losses. Maximum power dissipation of 171 W supports high thermal loads. Wide operating temperature range from -40°C to 150°C suits industrial conditions. Low drain-source resistance of 95 mΩ improves conduction efficiency.
Compliance with RoHS and AEC-Q101 standards guarantees quality.
This Infineon MOSFET IPL65R160CFD7AUMA1 is optimized for industrial and automotive electronic solutions requiring high efficiency, power density, and robustness. It supports advanced power management designs and contributes to energy-saving and reliable electronic systems.
Explore additional Infineon semiconductor components and MOSFETs for varied power electronics applications on EnvMart.
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Frequently Asked Questions
The Infineon IPL65R160CFD7AUMA1 has a maximum continuous drain current of 21 A.
This model has a maximum drain-source voltage rating of 650 V, providing a high voltage tolerance for various applications.
The MOSFET is housed in a ThinPAK 8x8 surface mount package with 5 pins, suitable for compact PCB designs.
The typical gate charge at Vgs for the IPL65R160CFD7AUMA1 is 80 nC, which helps reduce switching losses.
It has a maximum power dissipation rated at 171 W, allowing for robust thermal handling in demanding applications.
This model operates reliably across a wide temperature range from -40°C to 150°C, making it suitable for harsh industrial environments.
The device conforms to RoHS and AEC-Q101 standards, ensuring quality and safety for automotive and industrial applications.
The maximum gate-source voltage for this MOSFET is 30 V, which is important for ensuring proper operation in circuits.
It features a maximum drain-source resistance of 95 mΩ, which improves conduction efficiency.
This model is ideal for applications such as power supplies, server and telecom equipment, solar power inverters, and electric vehicle charging stations.
The IPL65R160CFD7AUMA1 is an N-channel MOSFET, designed for efficient switching and power handling.
The forward voltage for this MOSFET is 1 V, which is relevant for its performance in various electronic circuits.
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