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Infineon ISC N-Channel Power MOSFET, 330 A Continuous Drain Current, 25 V Drain Source Voltage, 8-Pin SuperSO8 ISC010N06NM5

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model ISC010N06NM5
Mount Type Surface
Series ISC
Maximum Operating Temperature 150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 330A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 2.4mΩ
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.1V

Key Features

  • Optimized for synchronous rectification applications.
  • Low on-state resistance improves efficiency and reduces power loss.
  • Maximum power dissipation of 171 W ensures robust thermal performance.
  • Wide operating temperature range from -55°C to 150°C for reliability under harsh conditions.
  • Compliant with RoHS and automotive standard AEC-Q101 for quality assurance.
  • Surface mount design with 8 pins in a compact SuperSO8 5 x 6 mm package.
  • Low typical gate charge of 80 nC enables fast switching and high performance.
  • High maximum gate source voltage of 30 V ensures operational margin for gate drive.

Product Description

Infineon ISC010N06NM5 is an advanced N-Channel power MOSFET designed to deliver high continuous drain current up to 330 A and a maximum drain source voltage of 25 V. Housed in a compact 8-pin SuperSO8 5 x 6 mm package, it offers excellent thermal and electrical performance optimized for synchronous rectification in power management circuits.

This MOSFET features low on-state resistance (Rds(on)) of 2.4 mΩ ensuring minimal conduction losses and improved efficiency at both 25°C and 175°C operating temperatures. Its maximum power dissipation rating of 171 W supports demanding power applications requiring robust heat handling.

Capable of operating across a wide temperature range from -55°C to 150°C, the device meets stringent reliability standards such as RoHS compliance and automotive grade AEC-Q101, suitable for automotive and industrial electronics environments. The device includes low typical gate charge (80 nC at Vgs), enabling fast switching and reduced gate drive losses in DC-DC converters and motor drives.

Its surface mount package allows easy integration into modern electronic boards with improved solder joint reliability due to enlarged source interconnection. Environmental compliance with Pb-free lead plating and halogen-free materials further ensures eco-friendly usage.

Optimized for synchronous rectification to boost power efficiency. Low Rds(on) across temperature ranges reduces heat and power loss. High power dissipation capacity supports industrial and automotive applications. Wide operating temperature and robust avalanche testing increase device reliability.

Environmental compliance including Pb-free and halogen-free assures eco-friendly operation. Compact 8-pin SuperSO8 package aids high density PCB assembly. Automotive AEC-Q101 standard certification ensures suitability for vehicle electronics.

This Infineon MOSFET is ideal for industrial, automotive, power management, DC-DC conversion, motor control, and high-current electronic systems requiring efficient switching and thermal robustness.

Explore more semiconductor and MOSFET products in the Electronics & Electricals category on EnvMart for comprehensive solutions that meet your industrial and commercial demands.

Infineon ISC N-Channel Power MOSFET, 330 A Continuous Drain Current, 25 V Drain Source Voltage, 8-Pin SuperSO8 ISC010N06NM5
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Frequently Asked Questions

The maximum continuous drain current for this model is 330 A.

This MOSFET has a maximum drain source voltage of 25 V.

The maximum drain source resistance (Rds(on)) is 2.4 mΩ.

The typical gate charge at Vgs is 80 nC.

It operates within a temperature range of -55°C to 150°C.

The device is housed in a SuperSO8 5 x 6 mm package.

It is compliant with RoHS and the automotive standard AEC-Q101.

The maximum power dissipation rating is 171 W.

This model uses a surface mount design.

The maximum gate source voltage is 30 V.

It is optimized for synchronous rectification applications in power management circuits.

The country of origin for this MOSFET is India.

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