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Infineon ISC Type N-Channel MOSFET 193A 40V 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.8mm |
| Length | 4.4mm |
| Model | ISC017N04NM5ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 193A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- High continuous drain current rating of 193A enables robust power handling.
- Drain source voltage of 40V supports moderate voltage applications.
- Low resistance Rds(on) of 1.7 mΩ reduces conduction losses.
- Compact dimensions of 4.4mm length, 3.8mm height, and 1.1mm width ensure small footprint.
- Max power dissipation capacity of 115W supports high-performance operation.
- Operates reliably between -55°C and 175°C for harsh environments.
- Typical gate charge of 67nC enables efficient switching.
- Surface mount TDSON-8 FL package with 8 pins simplifies PCB assembly.
Product Description
Infineon ISC017N04NM5ATMA1 is a high-performance Type N-Channel MOSFET designed for demanding industrial and electronic power applications. With a maximum continuous drain current of 193A and drain source voltage rating of 40V, this MOSFET supports robust switching and power control tasks requiring effective thermal and electrical performance.
Packaged in an 8-pin TDSON-8 FL surface mount format, the device is suitable for compact electronic designs and automated assembly lines. The low on-state resistance of 1.7 milliohms reduces conduction losses, boosting efficiency, while the typical gate charge of 67 nano-Coulombs ensures low switching losses and improved thermal management.
The device is engineered for operation in harsh conditions, with a wide thermal range from -55°C minimum to 175°C maximum junction temperature and is 100% avalanche tested to ensure ruggedness against voltage spikes. Its low QGD/QGS ratio minimizes gate voltage spikes, increasing immunity against false turn-on in noisy environments.
Applications include battery-powered systems, low-voltage motor drives, and high-frequency switching circuits. The halogen-free lead plating and RoHS compliance make it suitable for environmentally conscious manufacturing.
High continuous drain current of 193A provides superior current handling. 40V maximum drain source voltage offers reliable voltage tolerance. Low resistance values improve energy efficiency and reduce heat. Compact TDSON-8 FL package enables space-saving PCB layouts.
Wide operating temperature range for reliability in demanding environments. Rugged avalanche-tested construction enhances durability. Low gate charge reduces switching losses for higher frequency operation. Lead plating complies with environmental standards.
This Infineon MOSFET is an ideal choice for industrial, automotive, commercial, and power electronics manufacturing seeking superior performance and reliability in N-channel MOSFET semiconductors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 193A, allowing for robust power handling in various applications.
This MOSFET has a maximum drain source voltage rating of 40V, making it suitable for moderate voltage applications.
The on-state resistance (Rds(on)) of this model is 1.7 mΩ, which helps reduce conduction losses and improve efficiency.
The TDSON-8 FL package has dimensions of 4.4mm in length, 3.8mm in height, and 1.1mm in width, allowing for compact PCB layouts.
The typical gate charge for this model is 67nC, which enables efficient switching and low switching losses.
This MOSFET operates reliably between -55°C and 175°C, making it suitable for harsh environments.
The maximum power dissipation capacity of this model is 115W, supporting high-performance operation.
The TDSON-8 FL package features 8 pins, facilitating easy surface mount assembly.
This model is a Type N-Channel MOSFET, designed for effective power control and switching applications.
The maximum gate source voltage (Vgs) for this MOSFET is 20V, ensuring compatibility with various control signals.
This device is suitable for applications including battery-powered systems, low-voltage motor drives, and high-frequency switching circuits.
Yes, this model features halogen-free lead plating and is RoHS compliant, making it suitable for environmentally conscious manufacturing.
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