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Nexperia N-Channel MOSFET 12.7 A 30 V Enhancement Mode 8-Pin MLPAK33 PXN6R7-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN6R7-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 12.7 A provides robust current handling capabilities.
- Maximum drain-source voltage of 30 V suitable for mid-voltage applications.
- Enhancement mode channel ensures reliable operation with gate control.
- 8-pin MLPAK33 surface-mount package allows compact PCB design.
- Trench MOSFET technology reduces gate charge for improved switching efficiency.
- Effective thermal performance with maximum power dissipation of 12.5 W.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Low drain-source resistance of 13.6 mΩ minimizes conduction losses.
Product Description
Nexperia PXN6R7-30QLJ is a high-performance N-Channel MOSFET designed for industrial, electronic, and power management applications. It features a maximum continuous drain current of 12.7 A and a maximum drain-source voltage of 30 V, operating in enhancement mode with a compact 8-pin MLPAK33 surface-mounted package.
This MOSFET utilizes Trench MOSFET technology offering ultra-low gate charges (QG and QGD) that enhance system efficiency particularly at high switching frequencies, making it ideal for switching power supplies and motor control.
The device offers superfast switching with soft recovery characteristics, minimizing electromagnetic interference and spiking, which benefits sensitive electronic and industrial equipment. Its maximum power dissipation rating of 12.5 W and low on-resistance of 13.6 mΩ ensure efficient power handling with reduced heat generation.
With a wide operating temperature range from -55°C to 150°C, it suits demanding environments including automotive and industrial applications, though it does not comply with specific automotive standards.
The MLPAK33 package has a small footprint (3.3 x 3.3 mm), facilitating space-saving PCB layouts in compact electronic designs. Maximum continuous drain current: 12.7 A. Maximum drain-source voltage: 30 V. Package type: MLPAK33 surface-mount device.
Channel mode: Enhancement. Maximum power dissipation: 12.5 W. Operating temperature: -55°C to 150°C. Drain-source resistance: 13.6 mΩ. Maximum gate-source voltage: 20 V. Low gate charge for efficient switching. Low EMI design with reduced spiking and ringing.
This Nexperia MOSFET is suitable for use in industrial electronics, power converters, motor drivers, and other applications requiring efficient power control and compact packaging. It supports modern electronic design needs where space, power efficiency, and thermal performance are critical.
Browse the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for related components and accessories.
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Frequently Asked Questions
The maximum continuous drain current of this model is 12.7 A.
This MOSFET has a maximum drain-source voltage of 30 V, making it suitable for mid-voltage applications.
The package type of this unit is MLPAK33, which is a surface-mount device.
It operates within a wide temperature range from -55°C to 150°C, supporting harsh environments.
The maximum power dissipation rating for this model is 12.5 W.
This MOSFET features a low drain-source resistance of 13.6 mΩ, which helps minimize conduction losses.
The maximum gate-source voltage for this MOSFET is 20 V.
The trench MOSFET technology reduces gate charge, improving switching efficiency, especially at high frequencies.
This MOSFET is suitable for industrial electronics, power converters, and motor drivers, among other applications requiring efficient power control.
The PXN6R7-30QLJ has a pin count of 8.
The low EMI design minimizes electromagnetic interference and spiking, which is beneficial for sensitive electronic and industrial equipment.
The channel mode of this MOSFET is enhancement, ensuring reliable operation with gate control.
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