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Vishay N-Channel Depletion MOSFET 218 A 100 V PowerPAK SO-8DC Surface Mount 8-Pin SiDR626LEP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiDR626LEP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8DC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 218A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.0021Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 218 A allows for robust high-power operation.
- Maximum drain-source voltage of 100 V suitable for demanding switching applications.
- PowerPAK SO-8DC package type ensures efficient heat dissipation and compact design.
- Maximum power dissipation rating of 120 W supports high thermal loads.
- Operating temperature range from -55°C to 125°C enables use in harsh environments.
- Low Rds(on) resistance of 0.0021 Ω minimizes conduction losses.
- Typical gate charge of 46.1 nC allows fast switching performance.
- Pin count of 8 and surface mount mount type compatible with modern PCB designs.
Product Description
Vishay SiDR626LEP-T1-RE3 is a Gen IV power N-Channel depletion MOSFET engineered for high power and thermal performance in surface mount packages. Operating at a maximum drain-source voltage of 100 V and continuous drain current of 218 A, this MOSFET is ideal for industrial, automotive, and power management applications.
This device features a PowerPAK SO-8DC package providing top side cooling which enhances thermal transfer and reliability. Its very low on-resistance Rds(on) of 0.0021 Ω contributes to lower conduction losses, improving overall efficiency in circuits such as solar micro-inverters, motor drive switches, and synchronous rectifiers.
The MOSFET supports a wide operating temperature range from -55°C to 125°C and meets the rigorous automotive standard AEC-Q101, making it suitable for demanding environments. Maximum power dissipation rating is 120 W, enabling sustained operation under substantial heat loads.
Additional technical attributes include a forward voltage of 1.2 V, a typical gate charge Qg of 46.1 nC at gate-source voltage, and an 8-pin surface mount configuration compatible with modern printed circuit board assembly.
Applications of the Vishay SiDR626LEP-T1-RE3 include industrial automation systems, renewable energy inverters, automotive electronic control units, HVAC controls, and manufacturing power electronics where reliable, high current switching is essential.
Maximum continuous drain current of 218 A allows for robust high-power operation. Maximum drain-source voltage of 100 V suitable for demanding switching applications. PowerPAK SO-8DC package type ensures efficient heat dissipation and compact design.
Maximum power dissipation rating of 120 W supports high thermal loads. Operating temperature range from -55°C to 125°C enables use in harsh environments. Low Rds(on) resistance of 0.0021 Ω minimizes conduction losses. Typical gate charge of 46.1 nC allows fast switching performance.
Pin count of 8 and surface mount mount type compatible with modern PCB designs. Complies with automotive standard AEC-Q101 for reliability in automotive applications. Forward voltage of 1.2 V enhances efficiency in synchronous rectification.
Explore the wide range of Vishay semiconductor products available at EnvMart for advanced electronics and power applications.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiDR626LEP-T1-RE3 is 218 A, allowing for robust high-power operation.
This MOSFET can handle a maximum drain-source voltage of 100 V, making it suitable for demanding switching applications.
The Vishay SiDR626LEP-T1-RE3 comes in a PowerPAK SO-8DC package type, which ensures efficient heat dissipation and a compact design.
The operating temperature range for this model is from -55°C to 125°C, enabling use in harsh environments.
The low Rds(on) resistance of this MOSFET is 0.0021 Ω, which minimizes conduction losses.
The typical gate charge for the Vishay SiDR626LEP-T1-RE3 is 46.1 nC, allowing for fast switching performance.
This model features a pin count of 8, compatible with modern PCB designs.
The Vishay SiDR626LEP-T1-RE3 complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.
The maximum power dissipation rating for this device is 120 W, supporting high thermal loads during operation.
The forward voltage of the Vishay SiDR626LEP-T1-RE3 is 1.2 V, which enhances efficiency in synchronous rectification.
This device features an N-channel configuration, which is typical for high power applications.
The dimensions of the Vishay SiDR626LEP-T1-RE3 are 6.15 mm in length and 5.15 mm in width.
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