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| Country of Origin | India |
|---|---|
| Brand | ams OSRAM |
| Model | SFH 325 FA |
| Series | SFH 325 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | SMT SIDELED |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Typical Fall Time | 7μs |
| Spectrums Detected | Infrared |
| Collector Current | 15mA |
| Maximum Light Current | 80μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 35V |
The ams OSRAM SFH 325 FA is an infrared phototransistor in the SMT SIDELED package, featuring a silicon NPN construction that offers robust and linear optical response characteristics. Rated with a maximum collector current of 15mA and collector-emitter voltage of 35V, it delivers reliable switching performance in compact surface-mount form factor.
This phototransistor detects the infrared spectrum and supports rapid signal transitions with typical rise and fall times of 7 microseconds each, making it suitable for sensitive and fast applications such as gesture recognition systems, electronic devices, and personal computer interfaces.
Designed to operate in a broad temperature range from -40°C to 100°C, the SFH 325 FA withstands harsh environmental conditions. It also features ESD protection up to 2 kV according to ANSI/ESDA/JEDEC standards (HBM, Class 2), enhancing its durability against static discharge commonly encountered in industrial settings.
The device's maximum dark current of 50 nA and maximum light current of 80 µA assure low noise and high sensitivity for precise detection. Its P-LCC-2 package type with black epoxy encapsulation contributes to optimal device stability and optical performance.
Operates with infrared spectrum detection for precise optical sensing. Typical rise and fall times of 7 microseconds ensure fast response. SMT SIDELED package offers compact surface-mount installation. Collector-emitter voltage up to 35V supports robust operation.
Wide operating temperature range from -40°C to 100°C. Maximum light current of 80μA and dark current of 50nA enable high sensitivity. ESD protection of 2 kV per ANSI/ESDA/JEDEC enhances reliability. Ideal for industrial, electronic, gesture recognition, and PC applications.
This phototransistor is part of a series designed for flexible mounting and high linearity in signal detection, making it applicable in industrial measurement systems, consumer electronics, and automation equipment. The device complies with high standards of performance with no automotive certification indicated.
Explore more infrared Phototransistors and optoelectronic components from ams OSRAM in the comprehensive EnvMart category listings to find matched devices for your design needs.
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