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ams OSRAM Infrared Phototransistor SMT SIDELED Package 15mA Collector Current SFH 325 FA

Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin India
Brand ams OSRAM
Model SFH 325 FA
Series SFH 325 FA
Maximum Operating Temperature 100°C
Package Type SMT SIDELED
Minimum Operating Temperature -40°C
Number Of Channels 1
Typical Fall Time 7μs
Spectrums Detected Infrared
Collector Current 15mA
Maximum Light Current 80μA
Maximum Dark Current 50nA
Collector Emitter Voltage 35V

Key Features

  • Operates with infrared spectrum detection for precise optical sensing.
  • Typical rise and fall times of 7 microseconds ensure fast response.
  • SMT SIDELED package provides compact and surface-mount convenience.
  • Maximum collector-emitter voltage of 35V supports reliable operation.
  • Operating temperature range spans from -40°C to 100°C for diverse environments.
  • Maximum light current rating of 80μA and dark current of 50nA ensure signal integrity.
  • ESD protection up to 2 kV acc. to ANSI/ESDA/JEDEC standards for durability.
  • Suitable for applications including electronic equipment, gesture recognition, and personal computers.

Product Description

The ams OSRAM SFH 325 FA is an infrared phototransistor in the SMT SIDELED package, featuring a silicon NPN construction that offers robust and linear optical response characteristics. Rated with a maximum collector current of 15mA and collector-emitter voltage of 35V, it delivers reliable switching performance in compact surface-mount form factor.

This phototransistor detects the infrared spectrum and supports rapid signal transitions with typical rise and fall times of 7 microseconds each, making it suitable for sensitive and fast applications such as gesture recognition systems, electronic devices, and personal computer interfaces.

Designed to operate in a broad temperature range from -40°C to 100°C, the SFH 325 FA withstands harsh environmental conditions. It also features ESD protection up to 2 kV according to ANSI/ESDA/JEDEC standards (HBM, Class 2), enhancing its durability against static discharge commonly encountered in industrial settings.

The device's maximum dark current of 50 nA and maximum light current of 80 µA assure low noise and high sensitivity for precise detection. Its P-LCC-2 package type with black epoxy encapsulation contributes to optimal device stability and optical performance.

Operates with infrared spectrum detection for precise optical sensing. Typical rise and fall times of 7 microseconds ensure fast response. SMT SIDELED package offers compact surface-mount installation. Collector-emitter voltage up to 35V supports robust operation.

Wide operating temperature range from -40°C to 100°C. Maximum light current of 80μA and dark current of 50nA enable high sensitivity. ESD protection of 2 kV per ANSI/ESDA/JEDEC enhances reliability. Ideal for industrial, electronic, gesture recognition, and PC applications.

This phototransistor is part of a series designed for flexible mounting and high linearity in signal detection, making it applicable in industrial measurement systems, consumer electronics, and automation equipment. The device complies with high standards of performance with no automotive certification indicated.

Explore more infrared Phototransistors and optoelectronic components from ams OSRAM in the comprehensive EnvMart category listings to find matched devices for your design needs.

ams OSRAM Infrared Phototransistor SMT SIDELED Package 15mA Collector Current SFH 325 FA
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