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ams OSRAM Infrared Photodiode Surface Mount SMR, 2 Pins, 750nm-1100nm, 0.005μs Rise Time SFH 2505 FA
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | ams OSRAM |
| Model | SFH 2505 FA |
| Mount Type | Surface |
| Series | SFH 2505 FA |
| Short Circuit Current | 70μA |
| Maximum Operating Temperature | 85°C |
| Package Type | SMR |
| Minimum Operating Temperature | -40°C |
| Dark Current | 1nA |
| Open Circuit Voltage | 390mV |
| Number of Pins | 2 |
| Typical Fall Time | 0.005μs |
| Wavelength of Peak Sensitivity | 900nm |
| Spectrums Detected | Infrared |
| Minimum Wavelength Detected | 750nm |
| Maximum Wavelength Detected | 1100nm |
Key Features
- The photodiode detects wavelengths between 750 nm and 1100 nm with peak sensitivity at 900 nm.
- It features a fast switching time with typical rise and fall times of 0.005 microseconds.
- The device is in a surface mount radial SMR package with two pins for easy PCB assembly.
- Operates reliably between temperatures of -40°C and 85°C, suitable for industrial and electronic applications.
- Exhibits low dark current of 1 nA ensuring high signal-to-noise ratio in detection.
- Offers an open circuit voltage of 390 mV and short circuit current of 70 µA.
- ESD protection up to 2 kV according to ANSI/ESDA/JEDEC standards enhances durability.
Product Description
ams OSRAM SFH 2505 FA Infrared Photodiode Surface Mount SMR is a precise silicon PIN photodiode designed to detect infrared light with high sensitivity and fast response times. Encapsulated in a compact surface mount radial (SMR) package, it features two pins and is ideal for integration in electronic systems requiring infrared wavelength detection.
The device operates effectively in a wavelength range from 750 nm to 1100 nm, achieving peak sensitivity at 900 nm, making it suitable for applications such as industrial automation, smoke detection, and various electronic equipment.
With typical rise and fall times at 0.005 microseconds, the SFH 2505 FA supports rapid signal processing, essential for high-speed optical detection tasks. It maintains functionality within operational temperatures spanning -40°C to 85°C, ensuring reliability under harsh environmental conditions.
Additional features include a low dark current of 1 nA that minimizes noise and enhances detection accuracy, an open circuit voltage of 390 mV, and a short circuit current of 70 µA. The device also has robust ESD protection up to 2 kV (HBM Class 2), conforming to industry standards, which extends its lifespan and operational safety.
The photodiode is housed in a black epoxy package matched for use with specific infrared emitting diodes like SFH 4543 and SFH 4558. Its compact surface mount design simplifies assembly into printed circuit boards for compact system layouts.
Wide wavelength detection capability enables diverse industrial, commercial, and automation uses. High-speed switching supports signal processing in optical communication and sensing applications. Maintains operation over a broad temperature range suitable for demanding environments.
Low dark current enhances precision in low-light and sensitive detection scenarios. Robust ESD protection ensures durability against static discharge damage.
This ams OSRAM infrared photodiode is manufactured in Malaysia and provided in new condition. It is ideal for professionals designing or maintaining electronic devices requiring efficient detection of infrared light signals.
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Frequently Asked Questions
This photodiode detects wavelengths between 750 nm and 1100 nm, with peak sensitivity at 900 nm.
The typical rise time of this model is 0.005 microseconds, allowing for fast signal processing.
It exhibits a low dark current of 1 nA, which enhances the signal-to-noise ratio during detection.
The photodiode operates reliably within a temperature range of -40°C to 85°C.
The open circuit voltage of this photodiode is 390 mV.
The short circuit current for this photodiode is 70 µA.
This photodiode features two pins for easy PCB assembly.
It is housed in a surface mount radial (SMR) package.
It has ESD protection up to 2 kV according to ANSI/ESDA/JEDEC standards.
This photodiode is manufactured in Malaysia.
It is suitable for applications such as industrial automation, smoke detection, and various electronic equipment.
The typical fall time for the SFH 2505 FA is also 0.005 microseconds.
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