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OSI Optoelectronics Infrared Photodiode, 65 ° Angle of Sensitivity, Through Hole TO-18 PIN-3CDI
Specifications
| Country of Origin | United States |
|---|---|
| Diameter | 5.33mm |
| Brand | OSI Optoelectronics |
| Height | 3.81mm |
| Length | 4.64mm |
| Model | PIN-3CDI |
| Packaging | Tape & Reel |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | D |
| Maximum Operating Temperature | 85°C |
| Package Type | TO-18 |
| Minimum Operating Temperature | -25°C |
| Polarity | Forward |
| Dark Current | 1nA |
| Standards/Approvals | RoHS |
| Number of Pins | 3 |
| Typical Rise Time | 10ns |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 970nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 30V |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
Key Features
- Detects infrared spectrums with a wavelength peak at 970 nm.
- Features a typical rise time of 10 ns and fall time of 0.6 ns ensuring moderate response speed.
- Compact dimensions with 5.33 mm diameter and 5 mm width in a planar diffused silicon design.
- Supports temperature operation range from -25°C to 85°C for versatile applications.
- High shunt resistance and low noise deliver stable and long-term performance.
- Has a dark current of 1 nA and a breakdown voltage of 30 V for reliable operation.
- Non-amplified, forward polarity device suitable for sensitive detection tasks.
- Complies with RoHS standards and is made in the United States.
Product Description
OSI Optoelectronics PIN-3CDI is an infrared photodiode designed for precise detection of wavelengths between 350 nm and 1100 nm. Its planar diffused silicon structure provides ultra-low noise and high shunt resistance, enabling applications requiring high sensitivity alongside moderate response speeds. This photodiode is housed in a robust through hole TO-18 package with a diameter of 5.33 mm and dimensions of approximately 3.81 mm height and 4.64 mm length. Its half sensitivity angle is 65 °, making it highly effective in capturing infrared light over a broad angular range.
The device operates reliably within a temperature range of -25°C to 85°C and has a dark current specification of 1 nA, ensuring minimal noise interference in sensitive applications. Typical rise and fall times of 10 ns and 0.6 ns respectively enable it to respond swiftly to light changes, suitable for moderate-speed optical detection tasks.
Designed without internal amplification and featuring forward polarity, the PIN-3CDI model is ideal for use in infrared sensing, optoelectronics, and electronics component manufacturing. Its packaging as tape and reel supports automated assembly processes. The photodiode complies with RoHS environmental standards and is manufactured in the United States.
Ideal for industrial, laboratory, electronics, and manufacturing use, the OSI Optoelectronics PIN-3CDI offers reliable sensing performance with long term stability for diverse optoelectronic designs.
Detects infrared spectrum with peak sensitivity at 970 nm. Compact TO-18 package with 3 pins for through hole mounting. Wide operating temperature from -25°C to 85°C ensures durability. Low dark current and breakdown voltage for stable operation.
Typical rise time 10 ns and fall time 0.6 ns for moderate response speed. RoHS compliant and manufactured in the United States. High shunt resistance and blue enhanced visible sensitivity. Blue enhanced series provides additional visible blue region sensitivity.
Explore the full range of OSI Optoelectronics Photodiodes and related components at EnvMart to meet your advanced infrared sensing and optoelectronic requirements.
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Frequently Asked Questions
This photodiode detects wavelengths between 350 nm and 1100 nm, with peak sensitivity at 970 nm.
The dimensions of this model are 5.33 mm in diameter, 5 mm in width, 3.81 mm in height, and 4.64 mm in length.
It has a typical rise time of 10 ns and a fall time of 0.6 ns, providing moderate response speed for optical detection tasks.
The angle of half sensitivity for this photodiode is 65 °, allowing effective capture of infrared light over a broad angular range.
This model operates reliably within a temperature range of -25°C to 85°C.
The dark current for this photodiode is specified at 1 nA, ensuring minimal noise interference in sensitive applications.
The breakdown voltage for this model is 30 V, providing reliable operation under various conditions.
It is packaged as tape and reel, which supports automated assembly processes.
This photodiode features a forward polarity, making it suitable for sensitive detection tasks.
The device complies with RoHS standards, ensuring it meets environmental safety requirements.
This model is ideal for infrared sensing, optoelectronics, and electronics component manufacturing.
The OSI Optoelectronics PIN-3CDI has 3 pins, suitable for through hole mounting.
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