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Vishay Infrared High Sensitivity Photodiode 5 x 4 x 0.9 mm Surface Mount QFN Package VEMD5010X01

Category Photodiode Brand Vishay Condition New

Specifications

Country of Origin Malaysia
Brand Vishay
Height 0.9mm
Length 5mm
Model VEMD5010X01
Packaging Tape & Reel
Width 4mm
Mount Type Surface
Short Circuit Current 26μA
Maximum Operating Temperature 100°C
Package Type QFN
Minimum Operating Temperature -40°C
Polarity Forward
Dark Current 0.2nA
Open Circuit Voltage 350mV
Package Form TOP view
Standards/Approvals RoHS
Number of Pins 4
Typical Fall Time 100ns
Automotive Standard AEC-Q101
Wavelength of Peak Sensitivity 940nm
Spectrums Detected Infrared
Breakdown Voltage 20V
Dimensions (L x W x H in mm) 5 x 4 x 0.9
Minimum Wavelength Detected 430nm
Maximum Wavelength Detected 1070nm
Angle of Half Sensitivity 65 °
Floor Life 72 h, MSL 4, according to J-STD-020
Radiant sensitive area (in mm2) 7.5

Key Features

  • Detects infrared spectrum with peak sensitivity at 940 nm.
  • Compact dimensions of 5 x 4 x 0.9 mm suitable for space-constrained designs.
  • High radiant sensitivity with a radiant sensitive area of 7.5 mm².
  • Fast response with typical rise and fall times of 100 ns.
  • Operational temperature range from -40°C to 100°C ensuring reliability in harsh environments.
  • Certified to automotive standard AEC-Q101 for high quality and robustness.
  • Surface mount QFN package with 4 pins and tape & reel packaging for automated assembly.
  • Features a 65-degree angle of half sensitivity for wide detection range.

Product Description

Vishay VEMD5010X01 infrared photodiode is a high speed, high sensitivity PIN photodiode optimized for visible and near-infrared radiation detection. It features a low profile surface mount QFN package with compact dimensions of 5 mm length, 4 mm width, and 0.9 mm height, facilitating integration in modern electronic devices.

The photodiode has a radiant sensitive area of 7.5 mm² and exhibits a peak wavelength sensitivity at 940 nm, covering a spectral response range from 430 nm to 1070 nm. Its fast response time with typical rise and fall times of 100 ns suits high-speed optical detection applications.

Engineered for demanding environments, it operates within a broad temperature range of -40°C to 100°C and meets the automotive standard AEC-Q101, ensuring durability and reliability. The device is RoHS compliant, supporting environmentally responsible product design.

The Vishay photodiode is packaged in a 4-pin surface mount QFN form factor with tape and reel packaging, facilitating automated manufacturing processes. It features a 65-degree angle of half sensitivity that allows wide-angle detection, enhancing its versatility in photodetection tasks.

Key electrical parameters include a short circuit current of 26 μA, low dark current of 0.2 nA, an open circuit voltage of 350 mV, and a breakdown voltage of 20 V. The product is made in Malaysia and comes with a floor life of 72 hours at moisture sensitivity level 4 according to J-STD-020 standards.

Detects infrared spectrum, peak at 940 nm. Compact 5 x 4 x 0.9 mm surface mount QFN package. High photo and radiant sensitivity with 7.5 mm² sensitive area. Fast electrical response with 100 ns rise and fall times. Operational from -40°C to 100°C; AEC-Q101 qualified.

Low dark current and high precision electrical characteristics. 4-pin surface mount package on tape and reel for automated assembly. Wide 65-degree detection angle for extensive sensing coverage.

This Vishay photodiode is ideal for high-speed photo detection in industrial electronics, automotive sensing, communications, and various laboratory and manufacturing optical detection systems. Its robust construction and certified quality standards make it suitable for demanding industrial and commercial applications.

Explore more Vishay Photodiode products and related electronics components with EnvMart to find precise solutions for your optical sensing needs.

Vishay Infrared High Sensitivity Photodiode 5 x 4 x 0.9 mm Surface Mount QFN Package VEMD5010X01
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Frequently Asked Questions

The photodiode has a peak sensitivity wavelength of 940 nm, covering the infrared spectrum.

It has compact dimensions of 5 mm in length, 4 mm in width, and 0.9 mm in height.

It operates within a temperature range of -40°C to 100°C, making it suitable for harsh environments.

The radiant sensitive area is 7.5 mm², allowing for effective light detection.

It features typical rise and fall times of 100 ns, suitable for high-speed applications.

This photodiode is packaged in a surface mount QFN form factor with tape and reel packaging for automated assembly.

It is certified to the automotive standard AEC-Q101, ensuring high quality and robustness.

The photodiode has a low dark current of 0.2 nA, which contributes to its sensitivity.

The short circuit current is specified at 26 μA, which indicates its performance characteristics.

It features a 65-degree angle of half sensitivity, allowing for a wide detection range.

The breakdown voltage is rated at 20 V, which is important for its operational limits.

This photodiode is manufactured in Malaysia, ensuring compliance with quality standards.

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