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Infineon N-Channel MOSFET 100 V 97 A, 8-Pin TDSON Surface Mount ISC060N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC060N10NM6ATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 97A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Surface-mount TDSON package with 8 pins for efficient PCB assembly.
- Maximum continuous drain current of 97 A for high load capacity.
- Maximum drain-source voltage of 100 V for reliable switching.
- Maximum power dissipation of 125 W to ensure sustained operation.
- Low Rds(on) of 6 milliohms minimizes conduction losses.
- Typical gate charge of 33 nC for predictable gate drive design.
- Operates over a wide temperature range from -55°C to 175°C.
- Maximum gate-source voltage of 20 V prevents overdrive damage.
Product Description
Infineon ISC060N10NM6ATMA1 is a high-performance N-Channel MOSFET in an 8-pin TDSON surface mount package. It supports a maximum continuous drain current of 97 A and a maximum drain-source voltage of 100 V, making it suitable for industrial and commercial power management applications.
This MOSFET’s low on-resistance of 6 milliohms ensures minimal conduction losses, improving energy efficiency in power converters and motor driver circuits. Its maximum power dissipation rating of 125 W allows for consistent operation under demanding conditions.
The device's gate charge of 33 nC enables predictable gate drive sizing, optimizing switching speeds and reducing switching losses. It is designed to operate reliably from -55°C to 175°C ambient temperatures, ensuring durability in harsh industrial environments.
The compact TDSON package facilitates automated PCB assembly and effective thermal management through a surface mount design. Its maximum gate-source voltage rating of 20 V protects against gate overvoltage conditions, enhancing device longevity.
Applications include high-current power converters, synchronous rectification in switching power supplies, battery management systems, and motor controls where robust current capability and reliability are critical.
Surface-mount TDSON package with 8 pins for efficient PCB assembly. Maximum continuous drain current of 97 A for high load capacity. Maximum drain-source voltage of 100 V for reliable switching. Maximum power dissipation of 125 W to ensure sustained operation.
Low Rds(on) of 6 milliohms minimizes conduction losses. Typical gate charge of 33 nC for predictable gate drive design. Operates over a wide temperature range from -55°C to 175°C. Maximum gate-source voltage of 20 V prevents overdrive damage.
Forward voltage drop of 1 V optimizes efficiency. Compact size with dimensions approximately 6.1 mm by 5.35 mm by 1.2 mm. Explore Infineon ISC series and other MOSFET products on EnvMart for reliable semiconductor solutions in industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 97 A, allowing for high load capacity in applications.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring reliable switching operations.
It supports a maximum power dissipation of 125 W, which allows for sustained operation under demanding conditions.
The low on-resistance of this unit is 6 milliohms, which minimizes conduction losses and improves energy efficiency.
The typical gate charge is 33 nC, facilitating predictable gate drive design for optimized switching speeds.
It operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.
This model comes in a surface-mount TDSON package with 8 pins, which facilitates efficient PCB assembly.
The dimensions of this unit are approximately 6.1 mm in length, 5.35 mm in width, and 1.2 mm in height.
The maximum gate-source voltage rating is 20 V, which helps prevent overdrive damage to the device.
This model is suitable for high-current power converters, synchronous rectification in switching power supplies, battery management systems, and motor controls.
The forward voltage drop of this MOSFET is 1 V, which optimizes efficiency in power applications.
This device features an N-channel type, which is commonly used for high-performance applications in power management.
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