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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 62.8mm |
| Length | 42.5mm |
| Model | DDB2U20N12W1RFB11BPSA1 |
| Mount Type | Screw |
| Series | DDB2U |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY1B-1 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC24720 and IEC16022 IEC8859-1 |
| Automotive Standard | IEC 60747 |
| Maximum Power Dissipation Pd | 20mW |
| Forward Voltage Vf | 1.85V |
Infineon DDB2U20N12W1RFB11BPSA1 Power MOSFET is an advanced semiconductor device in the AG-EASY1B-1 package equipped for high-performance industrial and automotive applications. It integrates a rugged mounting system utilizing screw fixings which ensure stable attachment and durability under mechanical stress conditions. The device includes a CoolSiC Schottky diode known for its low forward voltage drop and fast switching capabilities enhancing circuit efficiency.
This MOSFET incorporates an NTC temperature sensor directly within the module, allowing for accurate thermal sensing and protection functionalities, crucial in power electronics to avoid overheating. It operates reliably in extreme temperatures ranging from -40°C up to 150°C, making it suitable for demanding environments.
The product's maximum power dissipation of 20mW supports efficient thermal management through its Al2O3 substrate which offers low thermal resistance, thereby improving heat dissipation. Its compact size with a length of 42.5mm and height of 62.8mm permits versatile integration into various industrial and automotive electronic systems.
Conformance to international standards such as IEC24720, IEC16022, IEC8859-1, and the automotive-specific IEC 60747 ensures compliance with rigorous safety, quality, and performance benchmarks.
Equipped with integrated NTC temperature sensor for precise thermal monitoring. CoolSiC Schottky diode for enhanced switching efficiency. Screw mount type providing rugged and reliable installation. Wide operating temperature range from -40°C to 150°C.
Maximum power dissipation of 20mW for efficient heat handling. Forward voltage value of 1.85V for optimal conduction. Compact size with length 42.5mm and height 62.8mm. Compliance with IEC and automotive standards ensures quality and reliability.
This product suits industrial, automotive, power management, and electronics manufacturing applications requiring durable semiconductor devices with integrated sensing and thermal protection. It enhances system reliability while maintaining efficient power performance.
Discover more high-quality semiconductor components and Power MOSFET options in the EnvMart catalogue for your industrial, laboratory, and manufacturing needs.
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