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Infineon Power MOSFET AG-EASY1B-1 Package, Screw Mount, 20mW Power Dissipation DDB2U20N12W1RFB11BPSA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 62.8mm
Length 42.5mm
Model DDB2U20N12W1RFB11BPSA1
Mount Type Screw
Series DDB2U
Maximum Operating Temperature 150°C
Package Type AG-EASY1B-1
Minimum Operating Temperature -40°C
Standards/Approvals IEC24720 and IEC16022 IEC8859-1
Automotive Standard IEC 60747
Maximum Power Dissipation Pd 20mW
Forward Voltage Vf 1.85V

Key Features

  • Features integrated CoolSiC Schottky diode and a PressFIT / NTC temperature sensor for enhanced reliability.
  • Operating temperature range from -40°C up to 150°C suitable for automotive and industrial applications.
  • Low forward voltage of 1.85V improves efficiency in power switching circuits.
  • Compact dimensions measuring 42.5mm length and 62.8mm height facilitating integration in tight spaces.
  • Meets IEC 24720, IEC 16022, IEC 8859-1, and automotive IEC 60747 standards for quality and safety.

Product Description

Infineon DDB2U20N12W1RFB11BPSA1 Power MOSFET in AG-EASY1B-1 package is engineered for high-efficiency power management in industrial, automotive, and electronic component applications. This device features a screw mount type design for secure installation and robust mechanical stability.

The MOSFET includes a CoolSiC Schottky diode and integrated NTC temperature sensor to ensure safe operation under varying thermal conditions, contributing to enhanced longevity and reliability in harsh environments.

With a maximum power dissipation of 20mW and an operational temperature range from -40°C to 150°C, it supports demanding usage scenarios particularly in automotive electronics and power supply circuits.

The forward voltage rating of 1.85V facilitates efficient switching with minimized power loss. Its length of 42.5mm and height of 62.8mm offer flexibility for compact circuit design.

Features integrated CoolSiC Schottky diode and NTC temperature sensor for thermal monitoring. Maximum power dissipation is 20mW, suitable for power-sensitive applications. Wide operating temperature range from -40°C to 150°C meets automotive standards.

Compliant with IEC 24720, IEC 16022, IEC 8859-1, and IEC 60747 for industrial quality assurance. Screw mount type ensures secure and reliable mechanical fixing in assemblies. This MOSFET is ideal for use in automotive power modules, industrial power control units, and advanced electronic assemblies requiring reliable switching components.

Explore the extensive range of Infineon semiconductor products and power solutions on EnvMart to meet varied industrial and automotive electronic needs.

Infineon Power MOSFET AG-EASY1B-1 Package, Screw Mount, 20mW Power Dissipation DDB2U20N12W1RFB11BPSA1
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Frequently Asked Questions

The maximum power dissipation of this MOSFET is 20mW, making it suitable for power-sensitive applications.

It operates within a temperature range from -40°C to 150°C, suitable for both automotive and industrial applications.

The dimensions of this MOSFET are 42.5mm in length and 62.8mm in height, allowing for integration in compact spaces.

This model features a screw mount type design, ensuring secure installation and mechanical stability.

The forward voltage rating is 1.85V, which improves efficiency in power switching circuits.

It meets IEC 24720, IEC 16022, IEC 8859-1, and automotive IEC 60747 standards for quality and safety.

Yes, it includes an integrated CoolSiC Schottky diode and an NTC temperature sensor for enhanced reliability and thermal monitoring.

This MOSFET is ideal for use in automotive power modules, industrial power control units, and advanced electronic assemblies requiring reliable switching components.

The country of origin for this MOSFET is India.

This model belongs to the DDB2U series, which is designed for high-efficiency power management.

The integrated NTC temperature sensor helps ensure safe operation under varying thermal conditions, contributing to enhanced longevity and reliability.

The compact size of 42.5mm by 62.8mm facilitates integration into tight spaces, allowing for more flexible circuit design.

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