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STMicroelectronics N-Channel IGBT 150 A 1200 V Max247 Through Hole STGYA75H120DF2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGYA75H120DF2 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | Max247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 150A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.6V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 750W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Advanced trench gate field stop structure for optimized conduction and switching losses.
- Maximum collector emitter saturation voltage of 2.6 V ensures efficient operation.
- Designed for through hole mounting with 3-pin configuration.
- Operates reliably over temperature range from -55°C to 175°C.
- Supports switching speeds up to 1 MHz for high-frequency converter applications.
- Equipped with a very fast recovery antiparallel diode for improved performance.
- VCE(sat) has a slightly positive temperature coefficient for safe paralleling.
- Maximum power dissipation rated at 750 W for robust thermal handling.
Product Description
STMicroelectronics STGYA75H120DF2 is a high-performance N-Channel IGBT designed using an advanced proprietary trench gate field stop architecture. It provides an optimal balance between conduction and switching losses to maximize efficiency for high frequency power conversion. The device is supplied in a Max247 package with through hole mounting and a 3-pin layout, suitable for industrial, power electronics, and manufacturing applications.
With a maximum continuous collector current of 150 A and a collector emitter voltage rated at 1200 V, this IGBT is engineered for demanding electrical environments. It supports switching frequencies up to 1 MHz, making it ideal for modern power converters and inverter systems.
Featuring a maximum collector emitter saturation voltage of 2.6 V, the STGYA75H120DF2 offers efficient conduction with a positive temperature coefficient for safe parallel operation. Its maximum junction temperature of 175°C and wide operating temperature range from -55°C to 175°C ensure reliable performance in harsh industrial conditions.
The device includes a very fast recovery antiparallel diode which enhances switching characteristics and reduces losses in power switching circuits. Its maximum power dissipation of 750 W allows for robust thermal management during high load conditions.
Applications of this IGBT include power supply units, industrial motor drives, renewable energy inverters, and other electronic components requiring high efficiency and reliability.
Advanced trench gate field stop structure for energy-efficient switching. High maximum power dissipation for demanding loads. Robust thermal and electrical performance across wide temperature ranges. Fast switching speed suited for high-frequency electronics.
Compact through hole package facilitates easy integration.
This product is part of the STMicroelectronics portfolio, supporting innovation in electronic and power semiconductor components. Explore the category of IGBTs at EnvMart for related products and solutions.
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Frequently Asked Questions
The maximum continuous collector current for the STGYA75H120DF2 is 150 A.
This model has a maximum collector emitter voltage rating of 1200 V.
The maximum power dissipation for this IGBT is rated at 750 W.
It operates reliably over a temperature range from -55°C to 175°C.
The device is supplied in a Max247 package suitable for through hole mounting.
The maximum collector emitter saturation voltage (VceSAT) is 2.6 V.
The maximum gate emitter voltage (VGEO) is rated at 20 V.
It supports switching speeds up to 1 MHz, making it suitable for high-frequency applications.
Yes, it is equipped with a very fast recovery antiparallel diode to enhance performance.
The STGYA75H120DF2 features a 3-pin configuration.
This IGBT is suitable for applications such as power supply units, industrial motor drives, and renewable energy inverters.
It features an N-channel configuration, which is typical for high-performance IGBTs.
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