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STMicroelectronics N-Channel IGBT 150 A 1200 V Max247 Through Hole STGYA75H120DF2

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STMicroelectronics N-Channel IGBT 150 A 1200 V Max247 Through Hole STGYA75H120DF2

Name: STMicroelectronics N-Channel IGBT 150 A 1200 V Max247 Through Hole STGYA75H120DF2
Brand: STMicroelectronics
SKU: 173362
Price: 14.48 USD
Availability: InStock

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Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Model	STGYA75H120DF2
Mount Type	Through Hole
Maximum Operating Temperature	175°C
Package Type	Max247
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	150A
Maximum Collector Emitter Voltage Vceo	1200V
Maximum Collector Emitter Saturation Voltage VceSAT	2.6V
Channel Type	N
Maximum Power Dissipation Pd	750W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

Advanced trench gate field stop structure for optimized conduction and switching losses.
Maximum collector emitter saturation voltage of 2.6 V ensures efficient operation.
Designed for through hole mounting with 3-pin configuration.
Operates reliably over temperature range from -55°C to 175°C.
Supports switching speeds up to 1 MHz for high-frequency converter applications.
Equipped with a very fast recovery antiparallel diode for improved performance.
VCE(sat) has a slightly positive temperature coefficient for safe paralleling.
Maximum power dissipation rated at 750 W for robust thermal handling.

Product Description

STMicroelectronics STGYA75H120DF2 is a high-performance N-Channel IGBT designed using an advanced proprietary trench gate field stop architecture. It provides an optimal balance between conduction and switching losses to maximize efficiency for high frequency power conversion. The device is supplied in a Max247 package with through hole mounting and a 3-pin layout, suitable for industrial, power electronics, and manufacturing applications.

With a maximum continuous collector current of 150 A and a collector emitter voltage rated at 1200 V, this IGBT is engineered for demanding electrical environments. It supports switching frequencies up to 1 MHz, making it ideal for modern power converters and inverter systems.

Featuring a maximum collector emitter saturation voltage of 2.6 V, the STGYA75H120DF2 offers efficient conduction with a positive temperature coefficient for safe parallel operation. Its maximum junction temperature of 175°C and wide operating temperature range from -55°C to 175°C ensure reliable performance in harsh industrial conditions.

The device includes a very fast recovery antiparallel diode which enhances switching characteristics and reduces losses in power switching circuits. Its maximum power dissipation of 750 W allows for robust thermal management during high load conditions.

Applications of this IGBT include power supply units, industrial motor drives, renewable energy inverters, and other electronic components requiring high efficiency and reliability.

Advanced trench gate field stop structure for energy-efficient switching. High maximum power dissipation for demanding loads. Robust thermal and electrical performance across wide temperature ranges. Fast switching speed suited for high-frequency electronics.

Compact through hole package facilitates easy integration.

This product is part of the STMicroelectronics portfolio, supporting innovation in electronic and power semiconductor components. Explore the category of IGBTs at EnvMart for related products and solutions.