$1.50
$1.46
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon IAUC N-Channel MOSFET, 120 A, 40 V Enhancement Mode, 8-Pin SuperSO IAUC120N04S6N009ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC120N04S6N009ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Package Type | SuperSO |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.9mΩ |
| Channel Mode | Enhancement |
Key Features
- 120 A maximum continuous drain current for high power capability.
- 40 V maximum drain-source voltage for versatile applications.
- Enhancement mode channel for reliable switching control.
- 8-Pin SuperSO package providing compact and surface mount design.
- AEC-Q101 qualified for automotive reliability and quality.
- Low maximum drain-source resistance of 0.9 mΩ for efficient conduction.
- OptiMOS™-6 technology enhances switching performance and EMI behavior.
- High operating temperature up to 175°C suitable for demanding environments.
Product Description
Infineon IAUC120N04S6N009ATMA1 is a high-quality N-Channel MOSFET engineered for automotive and industrial power applications. Featuring a maximum continuous drain current of 120 A and a maximum drain-source voltage of 40 V, this device employs enhancement mode channel technology for optimal switching performance.
The MOSFET comes in an 8-Pin SuperSO leadless package (5x6 mm² footprint) which enables a compact design and superior thermal characteristics. Utilizing Infineon's advanced OptiMOS™-6 power MOS technology, it offers best-in-class figure of merit (FOM) balancing low conduction loss and switching efficiency, ideal for applications such as electronic power steering, body electronics, and other automotive systems requiring robust power control.
This device boasts an extremely low maximum drain-source resistance (Rds(on)) of 0.9 mΩ, contributing to significant power savings and heat reduction during operation. The package's copper-clip intercontact technology reduces inductance by approximately four times compared to traditional DPAK packages, enhancing EMI performance and switching speed.
Certified to AEC-Q101 standards, the IAUC120N04S6N009ATMA1 meets stringent automotive quality requirements. It is rated for operation up to 175°C, ensuring reliability in harsh environments. Additionally, it is fully RoHS compliant and 100% avalanche tested to guarantee durability and safety.
120 A continuous drain current rating enhances power handling capability. 40 V drain-source voltage supports a wide range of applications. 8-pin Surface Mount SuperSO package fits compact PCB layouts. OptiMOS™-6 technology reduces conduction losses and improves switching.
AEC-Q101 qualification ensures automotive-grade reliability. Low package inductance minimizes EMI interference for sensitive circuits.
This Infineon MOSFET is suitable for industrial, automotive, and commercial sectors requiring efficient, high-reliability power semiconductor components. Browse further in the MOSFET section of EnvMart for compatible and complementary products to design advanced power systems.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The Infineon IAUC120N04S6N009ATMA1 has a maximum continuous drain current of 120 A.
This model supports a maximum drain-source voltage of 40 V.
It uses an enhancement mode channel for reliable switching control.
This MOSFET comes in an 8-Pin SuperSO package, which is designed for surface mount applications.
The maximum drain-source resistance (Rds(on)) is 0.9 mΩ, which contributes to efficient conduction.
It is certified to AEC-Q101 standards, ensuring automotive-grade reliability and quality.
It is rated for operation up to 175°C, making it suitable for demanding environments.
This model employs OptiMOS™-6 technology, which enhances switching performance and EMI behavior.
The SuperSO package has a footprint of 5x6 mm², allowing for compact PCB layouts.
Yes, it is suitable for automotive applications such as electronic power steering and body electronics due to its high power capability and AEC-Q101 qualification.
The Infineon IAUC120N04S6N009ATMA1 is manufactured in India.
This model features an 8-pin configuration.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$1.50
$1.46
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent