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Infineon 650 V 4 A Schottky Diode Schottky 2-Pin TO-220 IDH04G65C6XKSA1

Category Schottky Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 29.95mm
Length 10.2mm
Model IDH04G65C6XKSA1
Width 4.5mm
Mount Type Through Hole
Series 6th Generation
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC (J-STD20 and JESD22)
Pin Count 2
Maximum Continuous Forward Current If 4A
Peak Reverse Repetitive Voltage Vrrm 650V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 14μA
Peak Non-Repetitive Forward Surge Current Ifsm 29A
Maximum Forward Voltage Vf 1.25V

Key Features

  • This diode features a maximum continuous forward current of 4 A suitable for various high-performance applications.
  • Its peak reverse repetitive voltage rating is 650 V, providing robust reverse voltage protection.
  • The device is constructed as a single diode with a 6th generation Schottky barrier rectifier technology.
  • It offers a low forward voltage drop of 1.25 V for improved efficiency and reduced power loss.
  • Operating temperature ranges from -55°C to 175°C, ensuring durability under extreme conditions.
  • The diode is packaged in a TO-220 through-hole mount type facilitating easy integration into various electronics assemblies.
  • Peak non-repetitive forward surge current is rated at 29 A to handle transient current spikes.
  • The construction adheres to JEDEC standards (J-STD20 and JESD22) ensuring industry compliance.

Product Description

The Infineon IDH04G65C6XKSA1 is a high reliability Schottky diode designed with a 650 V peak reverse repetitive voltage and 4 A maximum continuous forward current ratings. This 2-pin device is housed in a TO-220 through-hole package, ideal for applications requiring efficient power rectification with minimal losses.

As a 6th generation Schottky barrier diode, it provides best-in-class figure of merit characterized by low forward voltage drop of 1.25 V and negligible reverse recovery charge, ensuring efficient operation in power conversion circuits.

This diode operates with excellent thermal performance, tolerating continuous temperatures up to 175°C and minimum temperatures down to -55°C, making it suitable for harsh industrial and automotive environments. The ruggedness against high dv/dt and temperature independent switching behavior make it reliable for telecom switch-mode power supplies, high-end servers, uninterruptible power supplies, motor drives, solar inverters, and commercial lighting systems.

The device conforms to JEDEC standards (J-STD20 and JESD22), underscoring its quality and robustness in semiconductor applications. The 29 A peak non-repetitive forward surge current ensures resilience against transient voltage spikes.

Maximum continuous forward current rating of 4 A enhances durability in continuous operation. 650 V peak reverse voltage rating prevents breakdown in high voltage scenarios. Low forward voltage of 1.25 V reduces conduction losses and improves overall efficiency.

Wide operating temperature range ensures performance stability in diverse environmental conditions. Reliable TO-220 package allows straightforward mounting and heat dissipation. JEDEC standard compliance guarantees compatibility and quality assurance.

High surge current capability safeguards against transient spikes. Optimized for critical industrial sectors including telecom, servers, solar, and lighting industries.

This Infineon Schottky Diode is an essential component for engineers designing high-efficiency power electronics where minimized losses and durability are critical. Explore more high-performance semiconductor components in the EnvMart Electronics & Electricals Semiconductor category for your industrial, laboratory, and commercial needs.

Infineon 650 V 4 A Schottky Diode Schottky 2-Pin TO-220 IDH04G65C6XKSA1
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Frequently Asked Questions

The maximum continuous forward current of this diode is 4 A.

It has a peak reverse repetitive voltage rating of 650 V.

The forward voltage drop is rated at 1.25 V, which helps reduce conduction losses.

This diode operates within a temperature range of -55°C to 175°C.

It is packaged in a TO-220 through-hole mount type, facilitating easy integration.

The peak non-repetitive forward surge current is rated at 29 A.

The diode complies with JEDEC standards, specifically J-STD20 and JESD22.

The height of this diode is 29.95 mm.

The width is 4.5 mm and the length is 10.2 mm.

This device is configured as a single diode.

The peak reverse current is rated at 14 μA.

This diode belongs to the 6th generation series of Schottky barrier rectifiers.

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