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Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1

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Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1

Name: Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1
Brand: Infineon
SKU: 170011
Price: 3.89 USD
Availability: InStock

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Category Schottky Diode Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.35mm
Length	6.6mm
Model	IDDD12G65C6XTMA1
Width	15.6mm
Mount Type	Surface
Series	6th Generation CoolSiC
Maximum Operating Temperature	175°C
Package Type	HDSOP
Minimum Operating Temperature	-55°C
Standards/Approvals	JEDEC (J-STD20 and JESD22)
Pin Count	10
Maximum Continuous Forward Current If	12A
Peak Reverse Repetitive Voltage Vrrm	650V
Diode Configuration	Single
Rectifier Type	Schottky
Peak Reverse Current Ir	92μA
Peak Non-Repetitive Forward Surge Current Ifsm	64A
Maximum Forward Voltage Vf	1.25V

Key Features

Offers a maximum continuous forward current of 12 A.
Capable of withstanding peak reverse repetitive voltage up to 650 V.
Features a low maximum forward voltage of 1.25 V ensuring high efficiency.
Operates reliably over a temperature range from -55°C to 175°C.
Utilizes 6th Generation CoolSiC technology for improved performance.
Designed with a single diode configuration and Schottky rectifier type.
Supports peak non-repetitive forward surge current of 64 A.
Meets JEDEC standards (J-STD20 and JESD22) for quality and reliability.

Product Description

The Infineon IDDD12G65C6XTMA1 is a 650 V 12 A SiC Schottky Diode designed for high-performance surface mount technology (SMT) applications. Packaged in a 10-pin HDSOP format, it features the advanced 6th Generation CoolSiC technology providing exceptional switching performance and energy efficiency.

This diode supports a maximum continuous forward current of 12 A and can withstand peak reverse repetitive voltages up to 650 V, making it well suited for demanding power electronics applications including power factor correction (PFC), LLC resonant converters, and hard switching topologies. Its low maximum forward voltage of 1.25 V enables reduced conduction losses enhancing overall system efficiency.

Operating temperature range from -55°C to 175°C allows this diode to maintain reliable performance under extreme conditions. The package's double DPAK top-side cooled design offers improved thermal management by thermally decoupling the board and semiconductor, overcoming thermal PCB limits and enabling higher power density solutions.

The Infineon IDDD12G65C6XTMA1 diode complies with JEDEC standards (J-STD20 and JESD22), ensuring high quality and durability. Its compact dimensions (15.6 mm width, 6.6 mm length, and 2.35 mm height) suit dense PCB layouts in industrial, telecommunication, solar power, server, and computer power supply applications.

Maximum continuous forward current: 12 A. Peak reverse repetitive voltage: 650 V. Low forward voltage drop of 1.25 V for high efficiency. Wide operating temperature range: -55°C to 175°C. 6th Generation CoolSiC technology for superior performance.

Single diode Schottky rectifier in 10-pin HDSOP package. Designed for high power SMPS applications. Compliant with JEDEC (J-STD20 and JESD22) standards.

Ideal for industrial, laboratory, telecommunications, solar energy, and computing applications requiring efficient and reliable rectification solutions. The device supports high current hard-switching topologies and provides thermal advantages to improve system efficiency and power density.

Explore more high-quality semiconductor devices and Infineon products in the Electronics & Electricals category on EnvMart.