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Infineon N-Channel Reverse Conducting IGBT 80 A 650 V 282W TO-247 Through Hole IHW50N65R5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IHW50N65R5XKSA1 |
| Mount Type | Through Hole |
| Series | Resonant Switching |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | Pb-free lead plating, RoHS, JESD-022 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 282W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- High maximum continuous collector current of 80 A for demanding applications.
- Maximum collector-emitter voltage of 650 V ensures robust voltage handling.
- Maximum power dissipation of 282 W supports high power operations.
- 3-pin TO-247 package suitable for through hole mounting.
- Low collector-emitter saturation voltage of 1.35 V improves efficiency.
- Wide operating temperature range from -40°C to +175°C.
- Designed with Pb-free lead plating and compliant with RoHS and JESD-022 standards.
- Ideal for resonant switching applications.
Product Description
Infineon IHW50N65R5XKSA1 is an N-Channel Reverse Conducting Insulated-Gate Bipolar Transistor (IGBT) designed with integrated monolithic body diode. It offers a maximum continuous collector current of 80 A and a collector-emitter voltage rating of 650 V, making it suitable for demanding power switching tasks in industrial and electronic equipment.
The device is housed in a 3-pin TO-247 package which supports through-hole mounting techniques, providing easy integration into various circuit boards. Its low collector-emitter saturation voltage of 1.35 V helps to minimize conduction losses, contributing to higher efficiency and reduced thermal stress.
Operating reliably over a wide temperature range from -40°C to 175°C, this IGBT ensures stable performance in harsh environments. It features Pb-free lead plating and adheres to RoHS and JESD-022 environmental standards, underscoring its compliance with global regulatory requirements.
This IGBT belongs to the resonant switching series, optimized for applications requiring low switching losses and high reliability. Its robust electrical characteristics make it suited for industrial, HVAC, manufacturing, and other commercial power electronics applications.
High continuous current rating supports powerful switching loads. Robust voltage rating enhances device durability. Low saturation voltage minimizes energy losses during conduction. Wide operating temperature range ensures versatility in different conditions.
Eco-compliant with Pb-free and RoHS certifications. Reliable performance in resonant switching and power conversion use cases. Three-pin package facilitates straightforward mounting and replacement.
Infineon products represent quality and innovation in semiconductor technology. Explore our catalog for more high-performance IGBTs and other semiconductor components for your industrial and electronic projects.
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Frequently Asked Questions
The maximum continuous collector current for the IHW50N65R5XKSA1 is 80 A, making it suitable for demanding power switching applications.
This IGBT has a maximum collector-emitter voltage rating of 650 V, ensuring robust voltage handling capabilities.
It supports a maximum power dissipation of 282 W, which is beneficial for high power operations.
The IHW50N65R5XKSA1 is housed in a TO-247 package, which is suitable for through-hole mounting.
It operates reliably over a wide temperature range from -40°C to 175°C, ensuring stable performance in various environments.
The collector-emitter saturation voltage is 1.35 V, which helps to minimize conduction losses and improve efficiency.
It features Pb-free lead plating and complies with RoHS and JESD-022 standards, highlighting its environmental compliance.
This model has a 3-pin configuration, facilitating straightforward integration into circuit boards.
The IHW50N65R5XKSA1 is an N-Channel Reverse Conducting IGBT, designed for efficient power switching.
It is optimized for resonant switching applications, making it suitable for industrial, HVAC, and manufacturing power electronics.
The maximum gate-emitter voltage (VGEO) for the IHW50N65R5XKSA1 is 20 V, which is important for its operation.
This IGBT is manufactured in India, reflecting its origin in the semiconductor industry.
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