Infineon N-Channel Reverse Conducting Insulated Gate Bipolar Transistor IGBT, 1350 V, 80 A, 394 W Power IHW40N135R5XKSA1

Infineon IHW40N135R5XKSA1 is a high-voltage, N-Channel reverse conducting Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications such as resonant converter topologies and industrial power supplies. Featuring a maximum continuous collector current of 80 A and a collector-emitter voltage rating of 1350 V, this IGBT offers robust performance for demanding switching environments.

The device exhibits a low typical collector-emitter saturation voltage of 1.65 V, which reduces conduction losses at high currents, enhancing efficiency in power switching applications. A wide gate-emitter voltage tolerance of ±25 V provides flexibility in gate drive design, allowing for improved transient stress handling and robust operation across varied circuit conditions.

Housed in a TO-247 package with through-hole mounting, the IHW40N135R5XKSA1 enables straightforward heatsink attachment and effective thermal management, accommodating a maximum power dissipation of 394 W. The component is rated for junction temperatures from -40°C up to 175°C, making it suitable for high-temperature operating environments.

This IGBT is ideal for use in resonant converters, high-voltage inverters, switch-mode power supplies, and medium-power motor drives requiring integrated reverse conduction. It can also be deployed within switch networks in renewable-energy systems and laboratory prototyping setups, benefiting from the through-hole package ease of mounting.

The device meets RoHS directives and JESD-022 standards for moisture sensitivity and hazardous substances, confirming its compliance with environmental and quality measures for industrial applications.

1.65 V typical collector-emitter saturation voltage reduces conduction losses. ±25 V gate-emitter voltage tolerance offers robust gate-drive margins. 394 W max power dissipation supports elevated thermal stress management.

TO-247 through-hole package facilitates heatsinking and assembly. Wide operating temperature range from -40°C to 175°C junction temperature. Compliant with environmental RoHS and JESD-022 handling standards. Suitable for resonant converters, inverters, and motor drive applications.

Explore the Infineon range of semiconductors and IGBTs for advanced industrial, power electronics, and laboratory applications available at EnvMart.