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ROHM Type N-Channel IGBT 23 A 650 V 3-Pin TO-3PFM Through Hole RGTV80TK65GVC11

Category IGBTs Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 5.2mm
Length 21mm
Model RGTV80TK65GVC11
Width 16mm
Mount Type Through Hole
Series TV: For inverter (tsc 2μs)
Maximum Operating Temperature 175°C
Package Type TO-3PFM
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 23A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
Channel Type Type N
Maximum Power Dissipation Pd 85W
Maximum Gate Emitter Voltage VGEO ±30 V
SeriesTV For inverter (tsc 2μs)
TV For inverter (tsc 2μs)

Key Features

  • Maximum continuous collector current of 23 A ensures efficient power handling.
  • Maximum collector-emitter voltage rated at 650 V for robust operation.
  • Maximum power dissipation of 85 W supports high-load applications.
  • TO-3PFM package with 3 pins designed for through hole mounting.
  • Operation temperature ranges from -40°C to 175°C for wide environmental adaptability.
  • High-speed switching with low switching loss enhances energy efficiency.
  • Low collector-emitter saturation voltage of 1.9 V improves performance.
  • Pb-free lead plating and RoHS compliant ensuring environmental safety.

Product Description

ROHM RGTV80TK65GVC11 is a high-performance Type N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding electronic applications.

This device features a maximum continuous collector current of 23 A and a maximum collector-emitter voltage of 650 V, delivered in a compact 3-Pin TO-3PFM package intended for through hole mounting.

Its robust construction supports a maximum power dissipation of 85 W, allowing it to manage high power loads efficiently. Operating temperature range from -40°C to 175°C ensures reliable performance under harsh environmental conditions.

The RGTV80TK65GVC11 offers low collector-emitter saturation voltage of 1.9 V, enabling energy efficient switching with minimal losses.

It incorporates high-speed switching technology to reduce switching losses, making it ideal for power factor correction (PFC), solar inverters, uninterruptible power supplies (UPS), welding equipment, and induction heating (IH) systems.

This IGBT comes with Pb-free lead plating and is RoHS compliant, supporting environmentally responsible manufacturing and usage. Series TV devices are specifically tailored for inverter applications with 2 microsecond short-circuit tolerance, enhancing durability and safety.

Maximum continuous collector current of 23 A. 650 V maximum collector-emitter voltage. 85 W maximum power dissipation. 3-Pin TO-3PFM package, through hole mount. Operating temperature: -40°C to 175°C. Low collector-emitter saturation voltage of 1.9 V.

High-speed switching and low switching loss. Pb-free and RoHS compliant. Ideal for PFC, solar inverter, UPS, welding, and induction heating. Series TV for inverter use with 2 μs short-circuit tolerance.

This electronic component is essential for industrial power control, renewable energy systems, and advanced manufacturing equipment. Its reliable switching and thermal characteristics make it a preferred choice for engineers and designers focusing on efficiency and longevity.

Explore EnvMart's wide range of semiconductor components including IGBTs for diverse industrial and laboratory applications.

ROHM Type N-Channel IGBT 23 A 650 V 3-Pin TO-3PFM Through Hole RGTV80TK65GVC11
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Frequently Asked Questions

The maximum continuous collector current for this model is 23 A.

It has a maximum collector-emitter voltage rating of 650 V.

This IGBT supports a maximum power dissipation of 85 W.

The operating temperature range for this unit is from -40°C to 175°C.

It comes in a TO-3PFM package designed for through hole mounting.

The collector-emitter saturation voltage is low at 1.9 V.

This model features a pin count of 3.

Yes, it is RoHS compliant, ensuring it meets environmental safety standards.

It is suitable for applications such as power factor correction, solar inverters, uninterruptible power supplies, welding equipment, and induction heating systems.

The maximum gate-emitter voltage is ±30 V.

This IGBT is part of the TV series, specifically designed for inverter applications with a short-circuit tolerance of 2 microseconds.

The dimensions are 21 mm in length, 16 mm in width, and 5.2 mm in height.

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