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Infineon Type N-Channel IGBT Single Transistor IC 25 A 650 V 3-Pin TO-220 Through Hole IKA10N65ET6XKSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKA10N65ET6XKSA2 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 32.5W |
| Maximum Gate Emitter Voltage VGEO | 30 V |
Key Features
- The device features a 3-pin TO-220 package with through hole mount type for easy PCB assembly.
- It supports a maximum power dissipation of 32.5 watts ensuring reliable thermal handling.
- The transistor has a low saturation voltage Vce(sat) of 1.5 V typical for efficient switching.
- Operating temperature ranges from -40°C to 175°C, suitable for industrial applications.
- This N-Channel IGBT includes a maximum gate emitter voltage of 30 V and is RoHS compliant.
- It incorporates TrenchStop technology for enhanced performance in power electronics.
- The package includes a fast recovery anti-parallel diode improving switching speed and design margin.
- The component is lead-free with Pb-free plating, increasing environmental safety.
Product Description
Infineon's IKA10N65ET6XKSA2 is a Type N-Channel IGBT single transistor IC, delivering a maximum continuous collector current of 25 A and a collector emitter voltage rating of 650 V. Packaged in a 3-pin TO-220 package with through hole mount, it ensures sturdy mechanical and electrical connections to PCBs.
The component supports a maximum power dissipation of 32.5 watts, making it suitable for applications requiring efficient heat management. It provides a low collector emitter saturation voltage of 1.5 V typical, improving switching efficiency and reducing power losses in designs.
Its operating temperature range spans from -40°C to 175°C, permitting use in demanding industrial environments. Featuring a maximum gate emitter voltage rating of 30 V, this transistor supports robust control voltages without damage. It complies with RoHS standards and uses lead-free plating for green electronics compliance.
The IKA10N65ET6XKSA2 integrates TrenchStop technology for superior switching performance and low losses. An anti-parallel fast recovery diode is included, enhancing switching speed and reducing switching losses in power conversion applications.
This IGBT transistor IC is ideal for industrial automation, power control modules, motor drives, and electronic power conversion circuits. It offers designers a reliable, high-performance solution with excellent thermal and electrical properties.
The device features a 3-pin TO-220 package with through hole mount type for easy PCB assembly. It supports a maximum power dissipation of 32.5 watts ensuring reliable thermal handling. The transistor has a low saturation voltage Vce(sat) of 1.5 V typical for efficient switching.
Operating temperature ranges from -40°C to 175°C, suitable for industrial applications. This N-Channel IGBT includes a maximum gate emitter voltage of 30 V and is RoHS compliant. It incorporates TrenchStop technology for enhanced performance in power electronics.
The package includes a fast recovery anti-parallel diode improving switching speed and design margin. The component is lead-free with Pb-free plating, increasing environmental safety. Applications include industrial, power control, automation, and electronic circuit designs.
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Frequently Asked Questions
The IKA10N65ET6XKSA2 has a maximum continuous collector current of 25 A.
This model has a maximum collector emitter voltage rating of 650 V.
It supports a maximum power dissipation of 32.5 watts.
The operating temperature range spans from -40°C to 175°C.
It is packaged in a 3-pin TO-220 package with through hole mount type.
The typical collector emitter saturation voltage (Vce(sat)) is 1.5 V.
The maximum gate emitter voltage is rated at 30 V.
Yes, it is RoHS compliant and features lead-free plating for environmental safety.
It incorporates TrenchStop technology for improved performance in power electronics.
This IGBT is suitable for applications in industrial automation, power control modules, motor drives, and electronic power conversion circuits.
The package includes a fast recovery anti-parallel diode, which enhances switching speed and reduces losses.
The country of origin for this model is India.
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