STMicroelectronics STB37N60 N-Channel MOSFET, 28 A, 600 V Enhancement Mode, 3-Pin TO-263 Package STB37N60DM2AG

STMicroelectronics STB37N60DM2AG is a high voltage N-channel Power MOSFET designed specifically for automotive and industrial applications requiring robust, high-efficiency switching. It supports a maximum continuous drain current of 28 A and a drain-source voltage rating of 600 V, making it suitable for power conversion and motor control circuits.

This device is housed in a 3-pin TO-263 through-hole package, offering durability and easy integration into printed circuit boards. With a maximum power dissipation of 210 W, the MOSFET can operate within a wide temperature range of -55°C to 150°C, accommodating harsh operating environments common in automotive electronics.

Key technical features include an enhancement mode channel for efficient power handling, a very low RDS(on) resistance of 94 milliohms to reduce conduction losses, and a fast recovery body diode characterized by low gate charge and input capacitance. These properties contribute to minimized switching losses and high-frequency operation efficiency.

STB37N60DM2AG adheres to the stringent AEC-Q101 automotive standard, guaranteeing performance reliability under demanding conditions such as wide temperature excursions and electrical stress. The device's extremely high dv/dt ruggedness and Zener-protection capabilities provide enhanced circuit protection and longevity.

This MOSFET is particularly suited for applications like bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and power converter designs requiring fast switching and robust electrical performance. Its compact dimensions (15.85 mm length, 10.4 mm width, 4.6 mm height) enable it to fit efficiently in a variety of power electronic configurations.

Industrial sectors benefiting from this device include automotive electronics manufacturing, industrial power systems, HVAC motor drives, and advanced laboratory power control systems.

Set contains 1 Pc STMicroelectronics STB37N60DM2AG MOSFET. Explore a wide range of electronic components including MOSFETs at EnvMart for reliable and high-performance semiconductor solutions. Features enhancement mode channel operation with low Rds(on) resistance for efficient power management.

Packaged in a 3-pin TO-263 through-hole design for reliable mounting. Handles a maximum power dissipation of 210 W with excellent thermal endurance. Operates efficiently at temperatures ranging from -55°C to 150°C for robust automotive applications.

Integrates a fast recovery body diode with extremely low gate charge for minimized switching losses. Compliant with automotive standard AEC-Q101, ensuring high reliability and ruggedness. Designed with high dv/dt ruggedness and Zener protection for enhanced circuit durability.

Ideal for bridge topologies, ZVS phase-shift converters, and demanding high-efficiency converter designs. Dimensions: length 15.85 mm, width 10.4 mm, height 4.6 mm, facilitating integration into compact electronic assemblies.