$8.09
$7.85
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics MDmesh M5 N-Channel Power MOSFET 53A 300V TO-263 Surface Mount 3-Pin STB45N30M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.37mm |
| Length | 10.4mm |
| Model | STB45N30M5 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 53A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 0.04Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 95nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features an extremely low on-resistance of 0.04 ohms for superior efficiency.
- Utilizes enhancement mode channel technology for reliable switching.
- Supports a maximum power dissipation of 250 W suitable for high power applications.
- Compact surface mount TO-263 package with 3 pins ensuring easy PCB integration.
- Operates within a wide temperature range from minus 55°C to 150°C.
- Maximum gate-source voltage is rated at ±25 V allowing robust gate control.
- Typical gate charge is approximately 95 nC at the specified gate voltage.
- Forward voltage drop is 1.5 V optimizing conduction efficiency.
Product Description
STMicroelectronics STB45N30M5 is an advanced MDmesh M5 N-Channel Power MOSFET engineered for demanding industrial and electronic applications requiring high power and efficiency. Featuring innovative vertical process technology combined with a PowerMESH horizontal layout, this device offers an extremely low on-resistance and optimized switching performance.
The MOSFET supports a continuous drain current of 53 A and withstands drain-source voltage up to 300 V, making it ideal for power conversion, motor control, and power supply designs.
Its surface mount TO-263 package with 3 pins provides compactness and ease of assembly on printed circuit boards. The MOSFET is designed for robust operation across a wide temperature range from -55°C to 150°C, ensuring durability in harsh environments.
Additional technical characteristics include a maximum power dissipation of 250 W and a maximum gate-source voltage of 25 V, enabling efficient gate drive without damage. The device exhibits a typical gate charge of 95 nC at a gate voltage of 10 V, contributing to fast switching frequencies and minimized switching losses.
Forward voltage drop of 1.5 V ensures minimal conduction losses during operation. The product is manufactured in China under full compliance with industry standards but does not carry specific certifications or automotive approvals.
Extremely low on-state resistance for high efficiency. Enhancement mode with high current carrying capability. Wide operating temperature range for industrial use. Low gate charge enabling fast switching performance. Compact TO-263 package for surface mounting.
High power dissipation rating supporting heavy workloads. Reliable gate-source voltage tolerance. Optimal forward voltage for reduced power loss. Suited for power supplies, motor controllers, and industrial electronics.
This STMicroelectronics power MOSFET is suitable for industrial electronics, power management in HVAC, manufacturing equipment, and other demanding applications. Explore our Semiconductor and Power MOSFET categories for similar high-quality components on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STB45N30M5 is 53 A.
This model can withstand a maximum drain-source voltage of 300 V.
The on-resistance of this MOSFET is 0.04 ohms, which contributes to its efficiency.
The maximum power dissipation for the STB45N30M5 is rated at 250 W.
The typical gate charge at a specified gate voltage of 10 V is approximately 95 nC.
It operates within a wide temperature range from -55°C to 150°C.
This model comes in a compact TO-263 surface mount package with 3 pins.
The maximum gate-source voltage is rated at ±25 V.
The forward voltage drop for this MOSFET is 1.5 V.
The STB45N30M5 utilizes an N-channel type configuration.
This MOSFET is suitable for power conversion, motor control, and power supply designs in industrial electronics.
The height of the STB45N30M5 is 4.37 mm and the width is 9.35 mm.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
$1.44
$1.40
-3%
New
$1.89
$1.83
-3%
New
Recently Viewed Products
$8.09
$7.85
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent