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onsemi Bipolar Power Transistor 15 A, 60 V DC, NPN, 3-Pin SOT-93 TIP3055G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 20.35mm |
| Length | 15.2mm |
| Model | TIP3055G |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | TIP3055G |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-93 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V dc |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V dc |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 90W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Maximum DC collector current of 15 A supports demanding loads.
- Collector-emitter voltage rated at 60 V DC for versatile power switching.
- Through-hole mount type ensures stable PCB integration.
- NPN transistor polarity suitable for amplifier and switching circuits.
- Maximum power dissipation of 90 W allows efficient heat handling.
- Minimum DC current gain of 5 ensures good amplification performance.
- Wide operating temperature range from -65°C to 150°C for reliability in harsh environments.
- Compact package size with 15.2 mm length and 20.35 mm height.
Product Description
onsemi TIP3055G Bipolar power transistor is engineered for general purpose switching and amplifier applications in industrial and electronic domains. The robust NPN transistor is capable of handling a maximum DC collector current of 15 A and operates at a collector-emitter voltage of up to 60 V DC, packaged in a sturdy 3-pin SOT-93 configuration for through-hole mounting.
This transistor exhibits a minimum DC current gain (hFE) of 5, and can dissipate power up to 90 W, making it suitable for power management, control, and amplification in demanding electrical circuits. Its voltage ratings include a maximum collector-base voltage of 100 V DC and an emitter-base voltage of 7 V DC, supporting reliable switching behaviour.
The TIP3055G features a maximum transition frequency of 1 MHz, enabling fast switching speeds suitable for various signal processing and power regulation applications. It operates safely across a wide temperature spectrum ranging from -65°C to 150°C, ensuring durability in industrial, automotive, HVAC, and commercial electronics environments.
This transistor is not classified under any automotive standard, but its design emphasizes excellent safe operating area performance and long-term stability. Its dimensions of 15.2 mm length, 20.35 mm height, and 4.9 mm width allow compact assembly in printed circuit boards.
Designed for applications requiring robust power handling and switching. Widely used in industrial electronics, audio amplifiers, and power supply circuits. Ensures reliable performance even under high stress and temperature.
Through-hole mount provides secure mechanical fixation. Made in China, reflecting global manufacturing standards. Explore more high-quality transistors and semiconductor components in the EnvMart Electronics & Electricals catalog for your professional projects and industrial needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The TIP3055G has a maximum DC collector current of 15 A, making it suitable for demanding loads.
This transistor is rated for a collector-emitter voltage of 60 V DC, allowing for versatile power switching applications.
It is packaged in a 3-pin SOT-93 configuration designed for through-hole mounting, ensuring stable PCB integration.
The TIP3055G has a minimum DC current gain (hFE) of 5, which supports good amplification performance.
It can dissipate power up to 90 W, which allows for efficient heat handling in various applications.
This model operates safely across a wide temperature range from -65°C to 150°C, ensuring reliability in harsh environments.
The maximum transition frequency for this transistor is 1 MHz, enabling fast switching speeds for signal processing.
The dimensions are 15.2 mm in length, 20.35 mm in height, and 4.9 mm in width, allowing for compact assembly in PCBs.
The maximum emitter-base voltage (VEBO) for the TIP3055G is 7 V DC, supporting reliable switching behavior.
This transistor is designed for general purpose switching and amplifier applications in industrial and electronic domains.
The maximum collector-base voltage (VCBO) is rated at 100 V DC, which enhances its versatility in various circuits.
It uses a single transistor configuration, which is common in many electronic applications.
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