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onsemi Transistor NPN 30 A 250 V 3-Pin TO-204 High Power MJ21196G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Mexico
Brand onsemi
Height 8.51mm
Length 39.37mm
Model MJ21196G
Width 26.67mm
Mount Type Through Hole
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 250W
Maximum DC Collector Current Idc 30A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
High SOA 3 A, 80 V, 1 Second

Key Features

  • Maximum DC collector current of 30 A ensures high current handling capability.
  • Maximum collector-emitter voltage rating is 250 volts for reliable high voltage operation.
  • TO-204 package type with 3 pins designed for through-hole mounting.
  • High power dissipation rating of 250 watts supports demanding applications.
  • Minimum DC current gain (hFE) of 25 provides efficient transistor operation.
  • Wide operating temperature range from -65°C to 200°C ensures durability.
  • Maximum transition frequency of 1 MHz suitable for audio and linear circuits.
  • High SOA capability allows 3 A at 80 V for 1 second without damage.

Product Description

onsemi MJ21196G is a robust NPN transistor specifically engineered for high power audio output, disk head positioning, and linear electronics applications. It features a maximum DC collector current of 30 amperes and a maximum collector-emitter voltage of 250 volts, making it well suited for demanding electrical circuits requiring high current and voltage handling.

The transistor is constructed in a 3-pin TO-204 package, designed for reliable through-hole mounting on printed circuit boards. It supports a high power dissipation of 250 watts, ensuring it can operate efficiently in power-intensive environments. The device also exhibits a minimum DC current gain of 25, maintaining effective amplification with excellent gain linearity.

With a maximum transition frequency of 1 MHz, the MJ21196G can perform well in audio amplification and various linear electronic applications. Its thermal tolerances range from -65°C to 200°C, providing resilience under extreme operating conditions. Moreover, the transistor offers a high Safe Operating Area (SOA) rating where it can handle 3 A at 80 volts for 1 second, protecting against transient stress.

High current capacity of 30 A makes it ideal for power circuits. 250 V maximum voltage rating ensures reliable operation under load. Robust TO-204 package for durable through-hole mounting. Excellent power dissipation of 250 W for thermal management.

Minimum current gain of 25 ensures efficient amplification. Wide operating temperature range from -65°C to 200°C. Transition frequency of 1 MHz suitable for audio and linear applications. Safe Operating Area up to 3 A at 80 V for transient protection.

Manufactured in Mexico ensuring quality standards compliance.

This transistor is commonly employed in industrial, audio equipment, and precision control systems requiring reliable high power transistor functionality. It suits applications in power amplifiers, motor controllers, and linear signal processing circuits.

Explore the Electronics & Electricals category on EnvMart for a comprehensive range of semiconductor devices and Bipolar Transistors including the reliable onsemi MJ21196G.

onsemi Transistor NPN 30 A 250 V 3-Pin TO-204 High Power MJ21196G
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Frequently Asked Questions

The maximum DC collector current of this model is 30 A, allowing for high current handling capability.

It has a maximum collector-emitter voltage rating of 250 V, ensuring reliable high voltage operation.

The MJ21196G is housed in a TO-204 package type with 3 pins designed for through-hole mounting.

This unit supports a high power dissipation rating of 250 watts, suitable for demanding applications.

The minimum DC current gain (hFE) is 25, which provides efficient transistor operation.

It operates within a wide temperature range from -65°C to 200°C, ensuring durability under extreme conditions.

The maximum transition frequency is 1 MHz, making it suitable for audio and linear circuits.

The dimensions are 39.37 mm in length, 26.67 mm in width, and 8.51 mm in height.

The maximum emitter-base voltage (VEBO) is 5 V DC.

This transistor is commonly used in industrial applications, audio equipment, and precision control systems requiring high power functionality.

It has a high SOA capability, allowing it to handle 3 A at 80 V for 1 second without damage.

This model is manufactured in Mexico, ensuring compliance with quality standards.

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