onsemi PNP Transistor 4A 100V 3-Pin TO-225 BD682G

onsemi BD682G is a high-performance PNP transistor in a 3-pin TO-225 package, rated for a maximum DC collector current of 4 amperes and a collector emitter voltage of 100 volts. This single transistor configuration supports medium power amplification with a maximum power dissipation of 40 watts, making it suitable for a wide range of electronic and industrial amplifier applications.

Featuring a high DC current gain of 750 and a maximum transition frequency of 1 MHz, the BD682G offers excellent amplification characteristics. It is designed for use in through-hole mounting on printed circuit boards, facilitating reliable mechanical and electrical connections.

The compact package has physical dimensions of 7.8 mm in length, 27.73 mm in height, and 3 mm in width, enabling space-efficient designs. It operates robustly across a broad temperature range, from -55°C up to 150°C, ensuring dependable performance in demanding environments.

Constructed with monolithic technology and Pb-free materials, this transistor adheres to modern environmental standards. The BD682G is especially appropriate in complementary amplifier circuits and as an output device in general-purpose applications, including automotive and industrial electronics where durable and efficient PNP transistors are essential.

This transistor features a high DC current gain of 750. Supports power dissipation up to 40 watts. Compact 3-pin TO-225 package for through-hole mounting. Maximum operating temperature of 150°C ensures reliability. High transition frequency of 1 MHz suitable for general amplification.

Pb-free construction aligns with environmental regulations. Ideal for medium power Darlington transistor applications. Dimensions: Length 7.8 mm, Height 27.73 mm, Width 3 mm. Monolithic design ensures stable electrical characteristics.

Designed to operate from -55°C up to 150°C ambient temperature.

This onsemi BD682G transistor is widely applicable in industrial, construction, and electronic manufacturing sectors for signal amplification and switching tasks. Its balanced electrical and mechanical properties make it a reliable choice for circuit designers and technicians working on durable and efficient power transistor requirements.

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