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onsemi Transistor 3 A NPN 60 V dc 3-Pin TO-225 2N4922G

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onsemi Transistor 3 A NPN 60 V dc 3-Pin TO-225 2N4922G

Name: onsemi Transistor 3 A NPN 60 V dc 3-Pin TO-225 2N4922G
Brand: onsemi
SKU: 156548
Price: 0.55 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	11.1mm
Length	7.8mm
Model	2N4922G
Width	3mm
Mount Type	Through Hole
Series	2N4922
Maximum Operating Temperature	150°C
Package Type	TO-225
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V dc
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V dc
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	30W
Maximum DC Collector Current Idc	3A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Maximum DC collector current of 3 amperes supports substantial current demands.
NPN transistor polarity suitable for various switching applications.
Maximum collector emitter voltage of 60 V dc enables medium voltage operations.
Package type TO-225 supports through-hole mounting for robust installation.
Power dissipation rating of 30 W ensures excellent thermal management.
Operating temperature range from -65°C to 150°C accommodates harsh environments.
Low saturation voltage of 0.6 V dc at 1.0 A collector current maximizes efficiency.
Complementary to PNP transistors 2N4918, 2N4919, 2N4920 for circuit design flexibility.

Product Description

onsemi 2N4922G is a high-performance bipolar NPN transistor ideal for use in driver circuits, electronic switching, and amplification with a maximum collector current of 3 A and collector emitter voltage of 60 V dc. Packaged in TO-225 with a 3-pin configuration, it supports through-hole mounting widely used in industrial and commercial electronics.

This transistor features a power dissipation capability of 30 W, offering reliable heat dissipation under continual operation, with an extended operating temperature range from -65°C to 150°C allowing use in demanding HVAC, manufacturing, and automation environments. The low saturation voltage of 0.6 V dc at 1.0 A collector current reduces power losses, enhancing overall circuit efficiency.

The device includes a minimum DC current gain hFE of 40 and maximum transition frequency of 1 MHz, suitable for moderate frequency applications. It maintains excellent safe operating area characteristics, important for robust design in industrial electronics.

Its dimensions of 11.1 mm height, 7.8 mm length, and 3 mm width allow precise layout on PCBs. The NPN type transistor complements the PNP series 2N4918, 2N4919, and 2N4920, providing versatility for full push-pull or complementary amplifier stages.

Maximum collector current of 3 A supports demanding load conditions. 60 V collector-emitter voltage rating enables medium-voltage circuit designs. TO-225 package type supports secure, through-hole mounting. Power dissipation rating of 30 W ensures efficient thermal performance.

Wide operating temperature range enables use in harsh environments. Low saturation voltage improves overall energy efficiency. Complements PNP counterparts for flexible amplifier design. Compact dimensions for high-density PCB layouts.

Single transistor configuration suitable for discrete component applications. Robust and reliable transistor meeting semiconductor industry requirements.

This product belongs to the Bipolar Transistors category within the Semiconductor segment of Electronics & Electricals, ideal for industrial, laboratory, and manufacturing use cases. For similar components and related electronic parts, explore the EnvMart catalog to find complementary devices and accessories.