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DiodesZetex NPN Transistor 2 A 60 V 3-Pin E-Line Through Hole ZTX651

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin United Kingdom
Brand DiodesZetex
Height 17.98mm
Length 4.77mm
Model ZTX651
Width 2.41mm
Mount Type Through Hole
Series ZTX651
Maximum Operating Temperature 200°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 175MHz

Key Features

  • Maximum DC collector current of 2 amperes provides robust performance.
  • Maximum collector-emitter voltage rating is 60 volts for reliable operation.
  • 3-pin E-line package with through-hole mounting format.
  • High transition frequency of 175 MHz supports high-speed switching.
  • Maximum power dissipation capability of 1 watt ensures thermal stability.
  • Wide operating temperature range from -55°C to 200°C for harsh environments.
  • Automotive-grade compliance with AEC-Q101 standard.
  • Transistor gain (hFE) minimum of 40 enables efficient amplification.

Product Description

DiodesZetex ZTX651 is a high-performance NPN bipolar transistor designed for general-purpose semiconductor applications. It supports a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 60 V, making it suitable for low to medium power electronic circuits.

The transistor comes in a 3-pin E-line package with through-hole mount style, facilitating ease of installation in printed circuit boards. Its compact dimensions of 17.98 mm height, 4.77 mm length, and 2.41 mm width allow for use in dense circuit arrangements.

With a maximum transition frequency of 175 MHz and a power dissipation capacity of 1 watt, the ZTX651 transistor offers reliable high-speed switching performance while maintaining thermal stability. The minimum DC current gain (hFE) of 40 supports effective amplification in various electronic designs.

Rated for operation in extreme conditions, this transistor endures temperatures ranging from -55°C to 200°C, and it complies with the automotive-grade standard AEC-Q101, ensuring enhanced reliability in automotive and industrial control systems.

This device finds extensive application across industrial automation, power management, and electronic signal amplification tasks as a versatile discrete semiconductor component. Maximum DC collector current of 2 amperes provides robust performance.

Maximum collector-emitter voltage rating is 60 volts for reliable operation. 3-pin E-line package with through-hole mounting format. High transition frequency of 175 MHz supports high-speed switching. Maximum power dissipation capability of 1 watt ensures thermal stability.

Wide operating temperature range from -55°C to 200°C for harsh environments. Automotive-grade compliance with AEC-Q101 standard. Compact dimensions: 17.98 mm height, 4.77 mm length, and 2.41 mm width. Transistor gain (hFE) minimum of 40 enables efficient amplification.

Minimum emitter-base voltage rating of 5 V prevents premature breakdown.

For engineers and designers seeking a reliable and robust bipolar transistor, the DiodesZetex ZTX651 offers excellent electrical characteristics and industry-standard packaging. Browse our broad selection of semiconductors at EnvMart for complementary components used in power and signal control applications.

Explore more products in our Bipolar Transistors category.

DiodesZetex NPN Transistor 2 A 60 V 3-Pin E-Line Through Hole ZTX651
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Frequently Asked Questions

The ZTX651 transistor supports a maximum DC collector current of 2 amperes.

It has a maximum collector-emitter voltage rating of 60 volts.

The maximum transition frequency of this transistor is 175 MHz, which supports high-speed switching applications.

This model has dimensions of 17.98 mm in height, 4.77 mm in length, and 2.41 mm in width.

The maximum power dissipation capability is 1 watt, ensuring thermal stability during operation.

The ZTX651 operates within a wide temperature range from -55°C to 200°C.

It comes in a 3-pin E-line package with a through-hole mounting format.

The minimum DC current gain (hFE) for the ZTX651 is 40, which enables effective amplification.

Yes, it complies with the automotive-grade standard AEC-Q101, ensuring reliability in automotive applications.

The maximum emitter-base voltage rating is 5 volts, which helps prevent premature breakdown.

The ZTX651 is an NPN bipolar transistor, suitable for various electronic applications.

This model is used in industrial automation, power management, and electronic signal amplification tasks.

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