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DiodesZetex 2 A NPN 60 V 3-Pin E-Line Transistor ZTX651

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin United Kingdom
Brand DiodesZetex
Height 17.98mm
Length 4.77mm
Model ZTX651
Width 2.41mm
Mount Type Through Hole
Series ZTX651
Maximum Operating Temperature 200°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 175MHz
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onsemi 2SD1835S-AA NPN Transistor, 2 A, 50 V, 3-Pin NPBrand ON Semiconductor

Key Features

  • Rated for a maximum collector emitter voltage of 60 volts.
  • Maximum DC collector current capacity of 2 amperes.
  • Features through-hole mount with E-Line package type.
  • NPN transistor polarity suitable for amplification and switching.
  • Supports high-frequency applications up to 175 MHz transition frequency.
  • Maximum power dissipation is 1 watt.
  • Operating temperature range extends from -55°C to 200°C.
  • Includes automotive standard certification AEC-Q101 for quality assurance.

Product Description

DiodesZetex ZTX651 is a high-performance, general-purpose NPN bipolar transistor designed for electronic circuit applications requiring up to 2 A collector current and a collector-emitter voltage of 60 V. It is housed in a through-hole E-Line package with a compact 3-pin E configuration, facilitating easy mounting on printed circuit boards.

This transistor supports high-frequency operation with a maximum transition frequency of 175 MHz, making it suitable for amplification and switching in RF and audio circuits. The maximum power dissipation rating of 1 watt ensures stability under typical operating conditions.

Operating temperature ranges from -55°C to +200°C, allowing use in demanding industrial and automotive environments. It carries the AEC-Q101 automotive standard certification, ensuring compliance with automotive quality and reliability requirements.

The physical dimensions of 4.77 mm length, 2.41 mm width, and 17.98 mm height provide a compact footprint to save circuit board space. The transistor polarity is NPN with a single transistor configuration suited to amplification and switching circuits.

Rated for a maximum collector emitter voltage of 60 volts. Maximum DC collector current capacity of 2 amperes. Features through-hole mount with E-Line package type. NPN transistor polarity suitable for amplification and switching.

Supports high-frequency applications up to 175 MHz transition frequency. Maximum power dissipation is 1 watt. Operating temperature range from -55°C to 200°C. Automotive standard AEC-Q101 certified. Compact 3-pin E-Line package.

This transistor is ideal for use in industrial electronics, automotive systems, consumer electronics, and communications equipment requiring reliable switching and amplification performance. Its robust construction and thermal ratings ensure stable operation under diverse environmental conditions.

Explore more Bipolar Transistors and semiconductor components in the Electronics & Electricals category at EnvMart for your design needs.

DiodesZetex 2 A NPN 60 V 3-Pin E-Line Transistor ZTX651
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Frequently Asked Questions

The maximum collector-emitter voltage for the ZTX651 is 60 volts.

This model has a maximum DC collector current capacity of 2 amperes.

The maximum transition frequency supported by this transistor is 175 MHz.

The physical dimensions of the ZTX651 are 4.77 mm in length, 2.41 mm in width, and 17.98 mm in height.

It is housed in a through-hole E-Line package type.

The operating temperature range extends from -55°C to 200°C.

This transistor carries the AEC-Q101 automotive standard certification for quality assurance.

The maximum power dissipation rating for the ZTX651 is 1 watt.

It uses a single transistor configuration and has NPN polarity.

The minimum DC current gain (hFE) for the ZTX651 is 40.

This transistor is suitable for amplification and switching in RF and audio circuits, as well as in industrial and automotive electronics.

The maximum emitter-base voltage (VEBO) for the ZTX651 is 5 volts.

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