Nexperia N-Channel MOSFET 8.6 A 20 V Enhancement Mode 3-Pin SOT-23 PMV16XNR

Nexperia PMV16XNR is a high-performance N-channel enhancement mode MOSFET designed for efficient switching in portable and low voltage applications. It features a low drain-source resistance of 33 mΩ and supports a continuous drain current of 8.6 A under a maximum 20 V drain-source voltage.

This device employs trusted Trench MOSFET technology offering very fast switching and improved power dissipation capability of 6.94 W, making it suitable for power management, LED driver circuits, and low-side load switching implementations.

The PMV16XNR comes in a compact SOT-23 three-pin surface mount package (TO-236AB) with dimensions approximately 3 mm by 1.4 mm by 1 mm, enabling high-density PCB layouts, especially in portable equipment. It withstands a broad operating temperature range from -55°C to 150°C, ensuring durability in harsh environments.

Key technical specifications include a typical gate charge of 13.4 nC at Vgs, maximum gate-source voltage of 12 V, and no automotive standard compliance. Its enhanced power dissipation and low threshold voltage facilitate reliable, energy-efficient operation in switching circuits.

Utilizes Trench MOSFET technology for enhanced reliability and low threshold voltage. Offers a maximum power dissipation of 6.94 W for effective thermal management. Operates efficiently in enhancement mode with fast switching capabilities.

Ideal for portable electronic applications such as LED drivers and low-side load switches. Compact 3-pin SOT-23 surface-mount package suitable for dense PCB designs. Wide operating temperature range of -55°C to 150°C ensures versatility.

The Nexperia PMV16XNR MOSFET is a suitable choice for applications in industrial electronics, portable equipment, communications, power management, and consumer electronics. Refine your design with this reliable and efficient discrete semiconductor component available through EnvMart's extensive catalog.