Infineon IRF3710ZSTRLPBF N-Channel MOSFET, 59 A, 100 V, 160 W TO-263 3-Pin Surface Mount IRF3710ZSTRLPBF

Infineon IRF3710ZSTRLPBF is a high-performance N-Channel MOSFET designed for power electronic applications requiring efficient switching with low conduction losses. Featuring a maximum continuous drain current of 59 A and a drain-source voltage rating of 100 V, this device is housed in a TO-263 package suitable for surface mounting, ensuring robust mechanical and thermal performance in compact spaces.

This HEXFET® Power MOSFET utilizes advanced processing to achieve an ultra-low on-resistance of 18 milliohms, promoting energy efficiency and heat reduction even at high current flows. The device supports fast switching speeds with a typical gate charge of 82 nC at specified gate voltage conditions, making it ideal for switching regulators, DC/DC converters, and automotive power control systems.

Operating reliably from -55°C up to 175°C junction temperatures and meeting the automotive AEC-Q101 standard, it provides outstanding durability and performance in demanding environments. Its surface mount TO-263 package with precise dimensions (length 10.67 mm, width 9.65 mm, height 4.83 mm) facilitates ease of PCB assembly and thermal management.

The IRF3710ZSTRLPBF supports repetitive avalanche events, enhancing its robustness in applications where voltage spikes occur. Its low forward voltage drop of 1.3 V further contributes to minimizing conduction losses which is critical in power-sensitive designs.

This device is ideal for industrial electronics, automotive systems, power management circuits, and high reliability applications in manufacturing, HVAC systems, and electric vehicle components.

This MOSFET features an enhancement channel mode and ultra-low on-resistance for efficient power handling. Capable of handling a maximum power dissipation of 160 watts for high performance. Operates within a temperature range of -55°C to 175°C ensuring reliability in harsh conditions.

Incorporates a typical gate charge of 82 nC at Vgs and a maximum gate-source voltage of 20 V for fast switching. Complies with automotive standard AEC-Q101 ensuring suitability for automotive applications. Compact dimensions with a package measuring 10.67 mm length, 9.65 mm width, and 4.83 mm height.

Designed with a forward voltage of 1.3 V and low drain source resistance of 18 mΩ to minimize power loss. Explore our extensive range of semiconductor and MOSFET devices at EnvMart to find high-quality components for your industrial and automotive electronic design needs.

Explore more products in our Discrete Semiconductor category.