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Nexperia N-Channel MOSFET 44 A, 40 V, Enhancement Mode, 4-Pin LFPAK Surface Mount BUK9M14-40EX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | BUK9M14-40EX |
| Width | 2.7mm |
| Mount Type | Surface |
| Series | BUK9M1440E |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 55W |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | 10V |
Key Features
- Designed for surface mount applications with LFPAK package type.
- Features enhancement mode operation with low on-resistance of 28 milliohms.
- Supports maximum gate-source voltage of 10 V ensuring efficient switching.
- Capable of operating in temperatures from -55°C to 175°C, suitable for demanding environments.
- Maximum power dissipation rating of 55 W for high performance.
- Compliant with automotive standard AEC-Q101 for reliable automotive use.
- Includes repetitive avalanche rating providing robust performance under transient conditions.
- True logic level gate with threshold voltage greater than 0.5 V at 175°C for precise control.
Product Description
Nexperia BUK9M14-40EX is an N-Channel MOSFET designed for high performance power switching in a 4-pin LFPAK surface mount package. It delivers 44 A continuous drain current with a maximum drain-source voltage of 40 V operating in enhancement mode.
The device features a low maximum drain-source resistance of 28 milliohms and supports gate-source voltages up to 10 V. It can dissipate up to 55 W of power and is able to operate over a wide temperature range from -55°C to 175°C, making it suitable for thermally demanding applications.
Qualified to the AEC-Q101 automotive standard, this MOSFET is ideal for robust automotive systems such as motor drives, lighting control, solenoid operation, and transmission control. Its repetitive avalanche rating enhances device reliability under transient conditions.
The true logic level gate ensures threshold voltages greater than 0.5 V at elevated temperatures, providing precise switching control. Its compact dimensions of 3.4 mm length, 2.7 mm width, and 900 μm height allow easy integration into compact PCB designs.
This MOSFET is beneficial in industrial, automotive, and power management applications requiring efficient switching and reliability. It facilitates ultra-high-performance power switching, efficient power conversion, and enhanced thermal management in demanding environments.
Designed for surface mount applications with LFPAK package type. Features enhancement mode operation with low on-resistance of 28 milliohms. Supports maximum gate-source voltage of 10 V ensuring efficient switching. Capable of operating in temperatures from -55°C to 175°C, suitable for demanding environments.
Maximum power dissipation rating of 55 W for high performance. Compliant with automotive standard AEC-Q101 for reliable automotive use. Includes repetitive avalanche rating providing robust performance under transient conditions.
True logic level gate with threshold voltage greater than 0.5 V at 175°C for precise control. Applications include motor control, lamps, solenoids, transmission control, and power switching. Explore more semiconductor and MOSFET components on EnvMart for your industrial and automotive power management projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 44 A.
It can handle a maximum drain-source voltage of 40 V.
The maximum drain-source resistance is 28 milliohms.
This MOSFET operates within a temperature range of -55°C to 175°C.
The maximum power dissipation rating is 55 W.
It comes in a 4-pin LFPAK surface mount package type.
It is compliant with the AEC-Q101 automotive standard.
The maximum gate-source voltage supported is 10 V.
The dimensions are 3.4 mm in length, 2.7 mm in width, and 900 μm in height.
It features a true logic level gate with a threshold voltage greater than 0.5 V at 175°C.
This MOSFET is suitable for applications such as motor control, lighting control, solenoid operation, and transmission control.
The typical gate charge at Vgs is 4.8 nC.
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